Charge accumulation by Direct Magnetoelectric Effect in ScAlN/Ni Nanoscale Devices
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866911111076380672 |
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| author | Luciano, Federica Van Meirvenne, Emma Spindler, Ephraim Pirro, Philipp Sorée, Bart Weiler, Mathias De Gendt, Stefan Ciubotaru, Florin Adelmann, Christoph |
| author_facet | Luciano, Federica Van Meirvenne, Emma Spindler, Ephraim Pirro, Philipp Sorée, Bart Weiler, Mathias De Gendt, Stefan Ciubotaru, Florin Adelmann, Christoph |
| contents | This work investigates the direct magnetoelectric effect in thin-film lab scale composite heterostructures comprising a 100 nm thick piezoelectric Sc0.4Al0.6N (ScAlN) and a magnetostrictive Ni with 100-200 nm thickness, fabricated on Si/SiO2 substrates. The films are patterned into square pillar arrays with lateral dimensions down to 500 nm x 500 nm. Vibrating sample magnetometry (VSM) measurements reveal in-plane magnetic anisotropy in the Ni films, attributed to strain induced by the underlying ScAlN layer. Nitrogen-vacancy (NV) magnetometry imaging confirms the formation of magnetic domains at remanence in polycrystalline Ni when patterned in sub-microscale structures. Capacitance measurements reveal a ScAlN dielectric constant at the device level consistent with unpatterned thin films, confirming the preservation of electrical integrity at the sub-microscale. The direct magnetoelectric effect is demonstrated through quasi-static charge measurements under applied out-of-plane DC magnetic fields, yielding equivalent open-circuit voltages up to 1.17 mV. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_13674 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Charge accumulation by Direct Magnetoelectric Effect in ScAlN/Ni Nanoscale Devices Luciano, Federica Van Meirvenne, Emma Spindler, Ephraim Pirro, Philipp Sorée, Bart Weiler, Mathias De Gendt, Stefan Ciubotaru, Florin Adelmann, Christoph Applied Physics This work investigates the direct magnetoelectric effect in thin-film lab scale composite heterostructures comprising a 100 nm thick piezoelectric Sc0.4Al0.6N (ScAlN) and a magnetostrictive Ni with 100-200 nm thickness, fabricated on Si/SiO2 substrates. The films are patterned into square pillar arrays with lateral dimensions down to 500 nm x 500 nm. Vibrating sample magnetometry (VSM) measurements reveal in-plane magnetic anisotropy in the Ni films, attributed to strain induced by the underlying ScAlN layer. Nitrogen-vacancy (NV) magnetometry imaging confirms the formation of magnetic domains at remanence in polycrystalline Ni when patterned in sub-microscale structures. Capacitance measurements reveal a ScAlN dielectric constant at the device level consistent with unpatterned thin films, confirming the preservation of electrical integrity at the sub-microscale. The direct magnetoelectric effect is demonstrated through quasi-static charge measurements under applied out-of-plane DC magnetic fields, yielding equivalent open-circuit voltages up to 1.17 mV. |
| title | Charge accumulation by Direct Magnetoelectric Effect in ScAlN/Ni Nanoscale Devices |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2508.13674 |