Evidence for single variant in altermagnetic RuO2(101) thin films
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arXiv
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| Auteurs principaux: | , , , , , , , , |
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866911175132839936 |
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| author | He, Cong Wen, Zhenchao Okabayashi, Jun Miura, Yoshio Ma, Tianyi Ohkubo, Tadakatsu Seki, Takeshi Sukegawa, Hiroaki Mitani, Seiji |
| author_facet | He, Cong Wen, Zhenchao Okabayashi, Jun Miura, Yoshio Ma, Tianyi Ohkubo, Tadakatsu Seki, Takeshi Sukegawa, Hiroaki Mitani, Seiji |
| contents | Altermagnetism presents intriguing possibilities for spintronic devices due to its unique combination of strong spin-splitting and zero net magnetization. However, realizing its full potential hinges on fabricating single-variant altermagnetic thin films. In this work, we present definitive evidence for the formation of single-variant altermagnetic RuO2(101) thin films with fully epitaxial growth on Al2O3(1-102) r-plane substrates, confirmed through rigorous structural analyses using X-ray diffraction, atomic-resolution transmission electron microscopy and X-ray magnetic linear dichroism. The mutual correspondence of the occupancy of oxygen atoms on the surfaces of RuO2(101)[010] and Al2O3(1-102)[11-20] plays a decisive role in the formation of the single-variant RuO2, which is also supported by our first-principles density functional theory calculations. We further observed spin-splitting magnetoresistance in the single-variant RuO2(101)/CoFeB bilayers, highlighting the characteristic effect of single variant on spin transport. The demonstration of single-variant RuO2(101) films marks a significant advancement in the field of altermagnetism and paves the way for exploring their potential applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_13720 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Evidence for single variant in altermagnetic RuO2(101) thin films He, Cong Wen, Zhenchao Okabayashi, Jun Miura, Yoshio Ma, Tianyi Ohkubo, Tadakatsu Seki, Takeshi Sukegawa, Hiroaki Mitani, Seiji Materials Science Altermagnetism presents intriguing possibilities for spintronic devices due to its unique combination of strong spin-splitting and zero net magnetization. However, realizing its full potential hinges on fabricating single-variant altermagnetic thin films. In this work, we present definitive evidence for the formation of single-variant altermagnetic RuO2(101) thin films with fully epitaxial growth on Al2O3(1-102) r-plane substrates, confirmed through rigorous structural analyses using X-ray diffraction, atomic-resolution transmission electron microscopy and X-ray magnetic linear dichroism. The mutual correspondence of the occupancy of oxygen atoms on the surfaces of RuO2(101)[010] and Al2O3(1-102)[11-20] plays a decisive role in the formation of the single-variant RuO2, which is also supported by our first-principles density functional theory calculations. We further observed spin-splitting magnetoresistance in the single-variant RuO2(101)/CoFeB bilayers, highlighting the characteristic effect of single variant on spin transport. The demonstration of single-variant RuO2(101) films marks a significant advancement in the field of altermagnetism and paves the way for exploring their potential applications. |
| title | Evidence for single variant in altermagnetic RuO2(101) thin films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2508.13720 |