Breaking the material-limited temperature coefficient of resistance via carrier feedback in a single transistor
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arXiv
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| Auteurs principaux: | , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866916908836585472 |
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| author | Chen, Jiazhen Song, Yihao Montealegre, David Alexander Cai, Mingyang Lee, Minjoo Larry Xia, Fengnian |
| author_facet | Chen, Jiazhen Song, Yihao Montealegre, David Alexander Cai, Mingyang Lee, Minjoo Larry Xia, Fengnian |
| contents | The temperature coefficient of resistance (TCR) is one of the most fundamental properties of a material. Semiconductor materials exhibiting high TCR are promising candidates for applications in high-resolution thermal imaging for autonomous systems, high-precision temperature sensing, and neuromorphic computing. However, the TCR magnitude is typically below 5%/K near 300 K for thermal imaging materials, such as vanadium oxide and amorphous silicon. Inspired by the distinctive characteristic of feedback in electronic circuits, we demonstrate a voltage-tunable TCR of up to 150%/K near 300 K in a two-terminal InGaAs/InP n-p-n transistor, enabled by an internal coherent carrier feedback mechanism. In this device, current amplification arises from a synergistic interplay between temperature-dependent transistor gain and avalanche multiplication. Carriers amplified at the emitter-base junction via the transistor effect are injected into the collector-base junction, where avalanche multiplication generates additional carriers. These excess carriers are then fed back to the emitter-base junction, triggering further transistor amplification. This regenerative positive feedback loop results in a high and bias-tunable temperature coefficient of resistance (TCR). This work reveals the potential of device engineering in overcoming the fundamental material-level physical limits of temperature properties. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_13987 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Breaking the material-limited temperature coefficient of resistance via carrier feedback in a single transistor Chen, Jiazhen Song, Yihao Montealegre, David Alexander Cai, Mingyang Lee, Minjoo Larry Xia, Fengnian Applied Physics The temperature coefficient of resistance (TCR) is one of the most fundamental properties of a material. Semiconductor materials exhibiting high TCR are promising candidates for applications in high-resolution thermal imaging for autonomous systems, high-precision temperature sensing, and neuromorphic computing. However, the TCR magnitude is typically below 5%/K near 300 K for thermal imaging materials, such as vanadium oxide and amorphous silicon. Inspired by the distinctive characteristic of feedback in electronic circuits, we demonstrate a voltage-tunable TCR of up to 150%/K near 300 K in a two-terminal InGaAs/InP n-p-n transistor, enabled by an internal coherent carrier feedback mechanism. In this device, current amplification arises from a synergistic interplay between temperature-dependent transistor gain and avalanche multiplication. Carriers amplified at the emitter-base junction via the transistor effect are injected into the collector-base junction, where avalanche multiplication generates additional carriers. These excess carriers are then fed back to the emitter-base junction, triggering further transistor amplification. This regenerative positive feedback loop results in a high and bias-tunable temperature coefficient of resistance (TCR). This work reveals the potential of device engineering in overcoming the fundamental material-level physical limits of temperature properties. |
| title | Breaking the material-limited temperature coefficient of resistance via carrier feedback in a single transistor |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2508.13987 |