Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices
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arXiv
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| Autores principales: | , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866911403142545408 |
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| author | Marcogliese, Lucas Sabapathy, Ouviyan Richter, Rudolf Tu, Jhih-Sian Bougeard, Dominique Schreiber, Lars R. |
| author_facet | Marcogliese, Lucas Sabapathy, Ouviyan Richter, Rudolf Tu, Jhih-Sian Bougeard, Dominique Schreiber, Lars R. |
| contents | Si/SiGe heterostructures on bulk Si substrates have been shown to host high fidelity electron spin qubits. Building a scalable quantum processor would, however, benefit from further improvement of critical material properties such as the valley-splitting landscape. Flexible control of the strain field and the out-of-plane electric field $\mathcal{E}_z$ may be decisive for valley splitting enhancement in the presence of alloy disorder. We envision the Si/SiGe membrane as a versatile scientific platform for investigating intervalley scattering mechanisms which have thus far remained elusive in conventional Si/SiGe heterostructures and have the potential to yield favourable valley-splitting distributions. Here, we report the fabrication of locally etched, suspended SiGe/Si/SiGe membranes from two different heterostructures and apply the process to realize a spin-qubit shuttling device on a membrane for future valley mapping experiments. The membranes have a thickness in the micrometer range and can be metallized to form a back-gate contact for extended control over the electric field. To probe their elastic properties, the membranes are stressed by loading with a profilometer stylus at room temperature. We distinguish between linear elastic and buckling modes, each offering mechanisms through which strain can be coupled to spin qubits. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_14589 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices Marcogliese, Lucas Sabapathy, Ouviyan Richter, Rudolf Tu, Jhih-Sian Bougeard, Dominique Schreiber, Lars R. Mesoscale and Nanoscale Physics Si/SiGe heterostructures on bulk Si substrates have been shown to host high fidelity electron spin qubits. Building a scalable quantum processor would, however, benefit from further improvement of critical material properties such as the valley-splitting landscape. Flexible control of the strain field and the out-of-plane electric field $\mathcal{E}_z$ may be decisive for valley splitting enhancement in the presence of alloy disorder. We envision the Si/SiGe membrane as a versatile scientific platform for investigating intervalley scattering mechanisms which have thus far remained elusive in conventional Si/SiGe heterostructures and have the potential to yield favourable valley-splitting distributions. Here, we report the fabrication of locally etched, suspended SiGe/Si/SiGe membranes from two different heterostructures and apply the process to realize a spin-qubit shuttling device on a membrane for future valley mapping experiments. The membranes have a thickness in the micrometer range and can be metallized to form a back-gate contact for extended control over the electric field. To probe their elastic properties, the membranes are stressed by loading with a profilometer stylus at room temperature. We distinguish between linear elastic and buckling modes, each offering mechanisms through which strain can be coupled to spin qubits. |
| title | Fabrication, characterization and mechanical loading of Si/SiGe membranes for spin qubit devices |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2508.14589 |