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| Main Authors: | , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2508.15122 |
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| _version_ | 1866909746625249280 |
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| author | Masiulionis, Ignas Lin, Bonnie Y. X. Seth, Sagar Kumar Grant, Gregory D. Lindquist, Wanda L. Kim, Sungjoon Kim, Junghwa Yanguas-Gil, Angel Elam, Jeffrey W. Zhang, Jiefei LeBeau, James M. Awschalom, David D. Guha, Supratik |
| author_facet | Masiulionis, Ignas Lin, Bonnie Y. X. Seth, Sagar Kumar Grant, Gregory D. Lindquist, Wanda L. Kim, Sungjoon Kim, Junghwa Yanguas-Gil, Angel Elam, Jeffrey W. Zhang, Jiefei LeBeau, James M. Awschalom, David D. Guha, Supratik |
| contents | This work explores erbium-doped calcium molybdate (CaMoO$_4$) thin films grown on silicon and yttria stabilized zirconia (YSZ) substrates, as a potential solid state system for C-band (utilizing the $\sim$1.5 $μ$m Er$^{3+}$ 4f-4f transition) quantum emitters for quantum network applications. Through molecular beam epitaxial growth experiments and electron microscopy, X-ray diffraction and reflection electron diffraction studies, we identify an incorporation limited deposition regime that enables a 1:1 Ca:Mo ratio in the growing film leading to single phase CaMoO$_4$ formation that can be in-situ doped with Er (typically 2-100 ppm). We further show that growth on silicon substrates is single phase but polycrystalline in morphology; while growth on YSZ substrates leads to high-quality epitaxial single crystalline CaMoO$_4$ films. We perform preliminary optical and microwave characterization on the suspected $Y_1 - Z_1$ transition of 2 ppm, 200 nm epitaxial CaMoO$_4$ annealed thin films and extract an optical inhomogeneous linewidth of 9.1(1) GHz, an optical excited state lifetime of 6.7(2) ms, a spectral diffusion-limited homogeneous linewidth of 6.7(4) MHz, and an EPR linewidth of 1.10(2) GHz. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_15122 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Microstructural and preliminary optical and microwave characterization of erbium doped CaMoO$_4$ thin films Masiulionis, Ignas Lin, Bonnie Y. X. Seth, Sagar Kumar Grant, Gregory D. Lindquist, Wanda L. Kim, Sungjoon Kim, Junghwa Yanguas-Gil, Angel Elam, Jeffrey W. Zhang, Jiefei LeBeau, James M. Awschalom, David D. Guha, Supratik Materials Science Quantum Physics This work explores erbium-doped calcium molybdate (CaMoO$_4$) thin films grown on silicon and yttria stabilized zirconia (YSZ) substrates, as a potential solid state system for C-band (utilizing the $\sim$1.5 $μ$m Er$^{3+}$ 4f-4f transition) quantum emitters for quantum network applications. Through molecular beam epitaxial growth experiments and electron microscopy, X-ray diffraction and reflection electron diffraction studies, we identify an incorporation limited deposition regime that enables a 1:1 Ca:Mo ratio in the growing film leading to single phase CaMoO$_4$ formation that can be in-situ doped with Er (typically 2-100 ppm). We further show that growth on silicon substrates is single phase but polycrystalline in morphology; while growth on YSZ substrates leads to high-quality epitaxial single crystalline CaMoO$_4$ films. We perform preliminary optical and microwave characterization on the suspected $Y_1 - Z_1$ transition of 2 ppm, 200 nm epitaxial CaMoO$_4$ annealed thin films and extract an optical inhomogeneous linewidth of 9.1(1) GHz, an optical excited state lifetime of 6.7(2) ms, a spectral diffusion-limited homogeneous linewidth of 6.7(4) MHz, and an EPR linewidth of 1.10(2) GHz. |
| title | Microstructural and preliminary optical and microwave characterization of erbium doped CaMoO$_4$ thin films |
| topic | Materials Science Quantum Physics |
| url | https://arxiv.org/abs/2508.15122 |