On the nature and charge state of the X-Defect, a radiation-induced Silicon defect with field-enhanced charge carrier emission
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| Main Authors: | , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866909927596883968 |
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| author | Sorgenfrei, Niels Gurimskaya, Yana Himmerlich, Anja Moll, Michael Parzefall, Ulrich Pintilie, Ioana Schwandt, Joern |
| author_facet | Sorgenfrei, Niels Gurimskaya, Yana Himmerlich, Anja Moll, Michael Parzefall, Ulrich Pintilie, Ioana Schwandt, Joern |
| contents | The elusive X-Defect, a defect found in low-resistivity $p$-type Silicon after irradiation, observed as a low-temperature shoulder of the $\mathrm{B}_\mathrm{i}\mathrm{O}_\mathrm{i}$ defect (Boron-interstitial-Oxygen-interstitial complex) in Thermally Stimulated Current (TSC) measurements, was investigated to determine its properties, matching them with those of a previously identified defect. Through a combination of TSC, Deep-Level Transient Spectroscopy (DLTS), Difference-DLTS (DDLTS), numerical simulations of field-enhanced charge carrier emissions in TSC measurements and a comparison to literature, the X-Defect was identified as the singly positively charged Silicon di-vacancy $\mathrm{V}_2(+/0)$. This assignment is supported by an agreement in activation energy, capture cross-section, trap type and charge emission process, as well as simulations comparing the effects of phonon-assisted tunnelling (PAT) and Poole-Frenkel (PF) mechanisms on TSC spectra. DDTLS measurements revealed a quadratic dependence of the activation energy on the electric field strength, confirming PAT as the prevailing mechanism over PF in the case of the radiation-induced X-Defect. Assigning the X-Defect to an electrically neutral defect in the space charge region resolves previous contradictions regarding its deficiency in impacting on the effective doping concentration. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2508_16197 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | On the nature and charge state of the X-Defect, a radiation-induced Silicon defect with field-enhanced charge carrier emission Sorgenfrei, Niels Gurimskaya, Yana Himmerlich, Anja Moll, Michael Parzefall, Ulrich Pintilie, Ioana Schwandt, Joern Materials Science High Energy Physics - Experiment Instrumentation and Detectors The elusive X-Defect, a defect found in low-resistivity $p$-type Silicon after irradiation, observed as a low-temperature shoulder of the $\mathrm{B}_\mathrm{i}\mathrm{O}_\mathrm{i}$ defect (Boron-interstitial-Oxygen-interstitial complex) in Thermally Stimulated Current (TSC) measurements, was investigated to determine its properties, matching them with those of a previously identified defect. Through a combination of TSC, Deep-Level Transient Spectroscopy (DLTS), Difference-DLTS (DDLTS), numerical simulations of field-enhanced charge carrier emissions in TSC measurements and a comparison to literature, the X-Defect was identified as the singly positively charged Silicon di-vacancy $\mathrm{V}_2(+/0)$. This assignment is supported by an agreement in activation energy, capture cross-section, trap type and charge emission process, as well as simulations comparing the effects of phonon-assisted tunnelling (PAT) and Poole-Frenkel (PF) mechanisms on TSC spectra. DDTLS measurements revealed a quadratic dependence of the activation energy on the electric field strength, confirming PAT as the prevailing mechanism over PF in the case of the radiation-induced X-Defect. Assigning the X-Defect to an electrically neutral defect in the space charge region resolves previous contradictions regarding its deficiency in impacting on the effective doping concentration. |
| title | On the nature and charge state of the X-Defect, a radiation-induced Silicon defect with field-enhanced charge carrier emission |
| topic | Materials Science High Energy Physics - Experiment Instrumentation and Detectors |
| url | https://arxiv.org/abs/2508.16197 |