Tracking flat bands via phonon-mediated interband scattering
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2025
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866908499300057088 |
|---|---|
| author | Garmroudi, Fabian Yan, Xinlin Paschen, Silke Thomas, Sean M. Bauer, Eric D. Pustogow, Andrej Rosa, Priscila F. S. |
| author_facet | Garmroudi, Fabian Yan, Xinlin Paschen, Silke Thomas, Sean M. Bauer, Eric D. Pustogow, Andrej Rosa, Priscila F. S. |
| contents | Flat-band (FB) materials have emerged as promising platforms for exploring exotic quantum phases. While numerous candidates have recently been identified through spectroscopic techniques such as angle-resolved photoemission spectroscopy, central challenges remain on how to tune FBs towards the Fermi level $E_F$ and to understand their impact on low-energy excitations probed in electronic transport experiments. Here, we show that, by attributing the temperature dependence of the electrical resistivity at elevated temperatures to electron-phonon interband scattering, one can infer the position of FBs near $E_F$ across diverse material classes. As charge carriers scatter off phonons, interband transitions into FB states lead to distinctive sub- or superlinear resistivity at elevated temperatures, governed by the proximity of the FB to $E_F$. Our phenomenological model captures these universal transport behaviors observed across several recently studied FB compounds and offers a simple, broadly applicable method for detecting flat bands. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_16491 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Tracking flat bands via phonon-mediated interband scattering Garmroudi, Fabian Yan, Xinlin Paschen, Silke Thomas, Sean M. Bauer, Eric D. Pustogow, Andrej Rosa, Priscila F. S. Strongly Correlated Electrons Materials Science Flat-band (FB) materials have emerged as promising platforms for exploring exotic quantum phases. While numerous candidates have recently been identified through spectroscopic techniques such as angle-resolved photoemission spectroscopy, central challenges remain on how to tune FBs towards the Fermi level $E_F$ and to understand their impact on low-energy excitations probed in electronic transport experiments. Here, we show that, by attributing the temperature dependence of the electrical resistivity at elevated temperatures to electron-phonon interband scattering, one can infer the position of FBs near $E_F$ across diverse material classes. As charge carriers scatter off phonons, interband transitions into FB states lead to distinctive sub- or superlinear resistivity at elevated temperatures, governed by the proximity of the FB to $E_F$. Our phenomenological model captures these universal transport behaviors observed across several recently studied FB compounds and offers a simple, broadly applicable method for detecting flat bands. |
| title | Tracking flat bands via phonon-mediated interband scattering |
| topic | Strongly Correlated Electrons Materials Science |
| url | https://arxiv.org/abs/2508.16491 |