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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| Accesso online: | https://arxiv.org/abs/2508.17997 |
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| _version_ | 1866911120836526080 |
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| author | Kim, Joonho Lee, Kihyun Jung, Joong-Eon Lee, Han Joo Im, Seongil Kim, Kwanpyo |
| author_facet | Kim, Joonho Lee, Kihyun Jung, Joong-Eon Lee, Han Joo Im, Seongil Kim, Kwanpyo |
| contents | Understanding phase transitions between crystalline phases of a material is crucial for both fundamental research and potential applications such as phase-change memory. In this study, we investigate the phase transition between GeSe crystalline polymorphs induced by either global annealing at moderate temperatures or localized laser-induced heating. The highly conductive gamma-GeSe transforms into semiconducting, single-crystalline alpha-GeSe while preserving a well-aligned crystal orientation. The distinct structural and electronic properties at the gamma-GeSe/alpha-GeSe interface were investigated by transmission electron microscopy analysis. We propose that the clustering of Ge vacancies in the gamma-GeSe phase at elevated temperatures is a key mechanism driving the transition, leading to the formation of alpha-GeSe through the segregation of a minor GeSe2 phase. Furthermore, we observe a high electrical resistance contrast of approximately 10^7 between gamma-GeSe and alpha-GeSe, underscoring the potential of GeSe as a model polymorphic system for electronic applications, including phase-change memory. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_17997 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Crystalline-to-Crystalline Phase Transition between Germanium Selenide Polymorphs with High Resistance Contrast Kim, Joonho Lee, Kihyun Jung, Joong-Eon Lee, Han Joo Im, Seongil Kim, Kwanpyo Materials Science Applied Physics Understanding phase transitions between crystalline phases of a material is crucial for both fundamental research and potential applications such as phase-change memory. In this study, we investigate the phase transition between GeSe crystalline polymorphs induced by either global annealing at moderate temperatures or localized laser-induced heating. The highly conductive gamma-GeSe transforms into semiconducting, single-crystalline alpha-GeSe while preserving a well-aligned crystal orientation. The distinct structural and electronic properties at the gamma-GeSe/alpha-GeSe interface were investigated by transmission electron microscopy analysis. We propose that the clustering of Ge vacancies in the gamma-GeSe phase at elevated temperatures is a key mechanism driving the transition, leading to the formation of alpha-GeSe through the segregation of a minor GeSe2 phase. Furthermore, we observe a high electrical resistance contrast of approximately 10^7 between gamma-GeSe and alpha-GeSe, underscoring the potential of GeSe as a model polymorphic system for electronic applications, including phase-change memory. |
| title | Crystalline-to-Crystalline Phase Transition between Germanium Selenide Polymorphs with High Resistance Contrast |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2508.17997 |