Flexible orbital torque device with ultralow switching current

Fuente: arXiv
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Autori principali: Gong, Liguang, Song, Jian, Lao, Bin, Li, Run-Wei, Wang, Zhiming
Natura: Preprint
Pubblicazione: 2025
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author Gong, Liguang
Song, Jian
Lao, Bin
Li, Run-Wei
Wang, Zhiming
author_facet Gong, Liguang
Song, Jian
Lao, Bin
Li, Run-Wei
Wang, Zhiming
contents Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we demonstrate a flexible and robust OT device based on a mica/SrRuO3(SRO)/CoPt heterostructure. We measure a large torque efficiency of -0.31, which originates from the significant orbital Hall effect in the SRO layer. Leveraging the low thermal conductivity of the mica substrate, a thermally-assisted switching mechanism is activated, enabling an ultralow threshold current density of 9.2x109 A/m2. This value represents a 90% reduction compared to conventional spin-torque devices and a 52% reduction against its rigid counterpart on a SrTiO3 substrate. The superior performances is well-maintained after 103 bending cycles, conforming its exceptional flexibility and durability. Our work pioneers the development of flexible OT devices, showcasing a viable path toward next-generation, low-power wearable spintronic applications.
format Preprint
id arxiv_https___arxiv_org_abs_2508_18746
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Flexible orbital torque device with ultralow switching current
Gong, Liguang
Song, Jian
Lao, Bin
Li, Run-Wei
Wang, Zhiming
Materials Science
Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we demonstrate a flexible and robust OT device based on a mica/SrRuO3(SRO)/CoPt heterostructure. We measure a large torque efficiency of -0.31, which originates from the significant orbital Hall effect in the SRO layer. Leveraging the low thermal conductivity of the mica substrate, a thermally-assisted switching mechanism is activated, enabling an ultralow threshold current density of 9.2x109 A/m2. This value represents a 90% reduction compared to conventional spin-torque devices and a 52% reduction against its rigid counterpart on a SrTiO3 substrate. The superior performances is well-maintained after 103 bending cycles, conforming its exceptional flexibility and durability. Our work pioneers the development of flexible OT devices, showcasing a viable path toward next-generation, low-power wearable spintronic applications.
title Flexible orbital torque device with ultralow switching current
topic Materials Science
url https://arxiv.org/abs/2508.18746