Flexible orbital torque device with ultralow switching current
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arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866911121578917888 |
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| author | Gong, Liguang Song, Jian Lao, Bin Li, Run-Wei Wang, Zhiming |
| author_facet | Gong, Liguang Song, Jian Lao, Bin Li, Run-Wei Wang, Zhiming |
| contents | Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we demonstrate a flexible and robust OT device based on a mica/SrRuO3(SRO)/CoPt heterostructure. We measure a large torque efficiency of -0.31, which originates from the significant orbital Hall effect in the SRO layer. Leveraging the low thermal conductivity of the mica substrate, a thermally-assisted switching mechanism is activated, enabling an ultralow threshold current density of 9.2x109 A/m2. This value represents a 90% reduction compared to conventional spin-torque devices and a 52% reduction against its rigid counterpart on a SrTiO3 substrate. The superior performances is well-maintained after 103 bending cycles, conforming its exceptional flexibility and durability. Our work pioneers the development of flexible OT devices, showcasing a viable path toward next-generation, low-power wearable spintronic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_18746 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Flexible orbital torque device with ultralow switching current Gong, Liguang Song, Jian Lao, Bin Li, Run-Wei Wang, Zhiming Materials Science Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we demonstrate a flexible and robust OT device based on a mica/SrRuO3(SRO)/CoPt heterostructure. We measure a large torque efficiency of -0.31, which originates from the significant orbital Hall effect in the SRO layer. Leveraging the low thermal conductivity of the mica substrate, a thermally-assisted switching mechanism is activated, enabling an ultralow threshold current density of 9.2x109 A/m2. This value represents a 90% reduction compared to conventional spin-torque devices and a 52% reduction against its rigid counterpart on a SrTiO3 substrate. The superior performances is well-maintained after 103 bending cycles, conforming its exceptional flexibility and durability. Our work pioneers the development of flexible OT devices, showcasing a viable path toward next-generation, low-power wearable spintronic applications. |
| title | Flexible orbital torque device with ultralow switching current |
| topic | Materials Science |
| url | https://arxiv.org/abs/2508.18746 |