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Main Authors: Ferrer, Diego, Hutchins, Jack, Koduru, Revanth, Gupta, Sumeet Kumar, Aziz, Admedullah
Format: Preprint
Published: 2025
Subjects:
Online Access:https://arxiv.org/abs/2508.20216
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author Ferrer, Diego
Hutchins, Jack
Koduru, Revanth
Gupta, Sumeet Kumar
Aziz, Admedullah
author_facet Ferrer, Diego
Hutchins, Jack
Koduru, Revanth
Gupta, Sumeet Kumar
Aziz, Admedullah
contents Machine learning-based compact models provide a rapid and efficient approach for estimating device behavior across multiple input parameter variations. In this study, we introduce two reverse-design algorithms that utilize these compact models to identify device parameters corresponding to desired electrical characteristics. The algorithms effectively determine parameter sets, such as layer thicknesses, required to achieve specific device performance criteria. Significantly, the proposed methods are uniquely enabled by machine learning-based compact modeling; alternative computationally intensive approaches, such as phase-field modeling, would impose impractical time constraints for iterative design processes. Our comparative analysis demonstrates a substantial reduction in computation time when employing machine learning-based compact models compared to traditional phase-field methods, underscoring a clear and substantial efficiency advantage. Additionally, the accuracy and computational efficiency of both reverse-design algorithms are evaluated and compared, highlighting the practical advantages of machine learning-based compact modeling approaches.
format Preprint
id arxiv_https___arxiv_org_abs_2508_20216
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Reverse Designing Ferroelectric Capacitors with Machine Learning-based Compact Modeling
Ferrer, Diego
Hutchins, Jack
Koduru, Revanth
Gupta, Sumeet Kumar
Aziz, Admedullah
Emerging Technologies
Machine learning-based compact models provide a rapid and efficient approach for estimating device behavior across multiple input parameter variations. In this study, we introduce two reverse-design algorithms that utilize these compact models to identify device parameters corresponding to desired electrical characteristics. The algorithms effectively determine parameter sets, such as layer thicknesses, required to achieve specific device performance criteria. Significantly, the proposed methods are uniquely enabled by machine learning-based compact modeling; alternative computationally intensive approaches, such as phase-field modeling, would impose impractical time constraints for iterative design processes. Our comparative analysis demonstrates a substantial reduction in computation time when employing machine learning-based compact models compared to traditional phase-field methods, underscoring a clear and substantial efficiency advantage. Additionally, the accuracy and computational efficiency of both reverse-design algorithms are evaluated and compared, highlighting the practical advantages of machine learning-based compact modeling approaches.
title Reverse Designing Ferroelectric Capacitors with Machine Learning-based Compact Modeling
topic Emerging Technologies
url https://arxiv.org/abs/2508.20216