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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2508.20710 |
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| _version_ | 1866912865182547968 |
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| author | Chanda, Amit Hvid-Olsen, Thor Hoegfeldt, Christina Gupta, Anshu Palliotto, Alessandro Ghaffari-Tabrizi, Fardin Dunstan, Maja A. Pedersen, Kasper S. Park, Dae-Sung Carrad, Damon J. Jespersen, Thomas Sand Trier, Felix |
| author_facet | Chanda, Amit Hvid-Olsen, Thor Hoegfeldt, Christina Gupta, Anshu Palliotto, Alessandro Ghaffari-Tabrizi, Fardin Dunstan, Maja A. Pedersen, Kasper S. Park, Dae-Sung Carrad, Damon J. Jespersen, Thomas Sand Trier, Felix |
| contents | We present the synthesis and study of the magnetic and electronic properties of NiFe2O4/γ-Al2O3/SrTiO3 heterostructure. The γ-Al2O3/SrTiO3 interface hosts a high-mobility two-dimensional electron gas (2DEG) with large spin-orbit coupling, making it promising for spintronics applications if it can be coupled to a suitable source of spin currents. Here, we synthesize a ferrimagnetic insulating NiFe2O4(001) layer on γ-Al2O3(001)/SrTiO3(001) using a low-temperature reactive sputtering at 150 deg C without compromising the mobility and charge carrier density of the 2DEG at the γ-Al2O3(001)/SrTiO3(001) interface. The sheet resistance of both γ-Al2O3/SrTiO3 and NiFe2O4/γ-Al2O3/SrTiO3 exhibits metallic behavior down to cryogenic temperatures, with a low temperature upturn driven by the Kondo-like scattering. Most importantly, NiFe2O4/γ-Al2O3/SrTiO3 behaves as a magnetic diode at low temperatures, and its rectification performance increases significantly with increasing magnetic field strength giving rise to a robust magneto-electronic rectification effect at low temperatures, which provides a first step towards the development of all-oxide heterostructures capable of efficient spin-charge conversion. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_20710 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Magnetism and nonlinear charge transport in NiFe2O4/γ-Al2O3/SrTiO3 heterostructure: Toward Spintronic Applications Chanda, Amit Hvid-Olsen, Thor Hoegfeldt, Christina Gupta, Anshu Palliotto, Alessandro Ghaffari-Tabrizi, Fardin Dunstan, Maja A. Pedersen, Kasper S. Park, Dae-Sung Carrad, Damon J. Jespersen, Thomas Sand Trier, Felix Materials Science We present the synthesis and study of the magnetic and electronic properties of NiFe2O4/γ-Al2O3/SrTiO3 heterostructure. The γ-Al2O3/SrTiO3 interface hosts a high-mobility two-dimensional electron gas (2DEG) with large spin-orbit coupling, making it promising for spintronics applications if it can be coupled to a suitable source of spin currents. Here, we synthesize a ferrimagnetic insulating NiFe2O4(001) layer on γ-Al2O3(001)/SrTiO3(001) using a low-temperature reactive sputtering at 150 deg C without compromising the mobility and charge carrier density of the 2DEG at the γ-Al2O3(001)/SrTiO3(001) interface. The sheet resistance of both γ-Al2O3/SrTiO3 and NiFe2O4/γ-Al2O3/SrTiO3 exhibits metallic behavior down to cryogenic temperatures, with a low temperature upturn driven by the Kondo-like scattering. Most importantly, NiFe2O4/γ-Al2O3/SrTiO3 behaves as a magnetic diode at low temperatures, and its rectification performance increases significantly with increasing magnetic field strength giving rise to a robust magneto-electronic rectification effect at low temperatures, which provides a first step towards the development of all-oxide heterostructures capable of efficient spin-charge conversion. |
| title | Magnetism and nonlinear charge transport in NiFe2O4/γ-Al2O3/SrTiO3 heterostructure: Toward Spintronic Applications |
| topic | Materials Science |
| url | https://arxiv.org/abs/2508.20710 |