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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2508.20925 |
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| _version_ | 1866918132068646912 |
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| author | Landberg, Megan O. Hill Yan, Bixin Chen, Huaiyu Ipek, Efe Trassin, Morgan Wallentin, Jesper |
| author_facet | Landberg, Megan O. Hill Yan, Bixin Chen, Huaiyu Ipek, Efe Trassin, Morgan Wallentin, Jesper |
| contents | Ferroelectric thin films present a powerful platform for next generation computing and memory applications. However, domain morphology and dynamics in buried ferroelectric stacks have remained underexplored, despite the importance for real device performance. Here, nanoprobe X-ray diffraction (nano-XRD) is used to image ferroelectric domains inside BiFeO3-based capacitors, revealing striking differences from bare films such as local disorder in domain architecture and partial polarization reorientation. We demonstrate sensitivity to ferroelectric reversal in poled capacitors, revealing expansive/compressive (001) strain for up-/down-polarization using nano-XRD. We observe quantitative and qualitative differences between poling by piezoresponse force microscopy (PFM) and in devices. Further, biasing induces lattice tilt at electrode edges which may modify performance in down-scaled devices. Direct comparison with PFM polarized structures even demonstrates potential nano-XRD sensitivity to domain walls. Our results establish nano-XRD as a noninvasive probe of buried ferroelectric domain morphologies and dynamics, opening avenues for operando characterization of energy-efficient nanoscale devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_20925 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electrode modified domain morphology in ferroelectric capacitors revealed by X-ray microscopy Landberg, Megan O. Hill Yan, Bixin Chen, Huaiyu Ipek, Efe Trassin, Morgan Wallentin, Jesper Materials Science Mesoscale and Nanoscale Physics Ferroelectric thin films present a powerful platform for next generation computing and memory applications. However, domain morphology and dynamics in buried ferroelectric stacks have remained underexplored, despite the importance for real device performance. Here, nanoprobe X-ray diffraction (nano-XRD) is used to image ferroelectric domains inside BiFeO3-based capacitors, revealing striking differences from bare films such as local disorder in domain architecture and partial polarization reorientation. We demonstrate sensitivity to ferroelectric reversal in poled capacitors, revealing expansive/compressive (001) strain for up-/down-polarization using nano-XRD. We observe quantitative and qualitative differences between poling by piezoresponse force microscopy (PFM) and in devices. Further, biasing induces lattice tilt at electrode edges which may modify performance in down-scaled devices. Direct comparison with PFM polarized structures even demonstrates potential nano-XRD sensitivity to domain walls. Our results establish nano-XRD as a noninvasive probe of buried ferroelectric domain morphologies and dynamics, opening avenues for operando characterization of energy-efficient nanoscale devices. |
| title | Electrode modified domain morphology in ferroelectric capacitors revealed by X-ray microscopy |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2508.20925 |