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| Main Authors: | , , , |
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| Format: | Preprint |
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2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2508.21357 |
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| _version_ | 1866911129746276352 |
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| author | Guo, Guo-Liang Pan, Xiao-Hong Dong, Hao Liu, Xin |
| author_facet | Guo, Guo-Liang Pan, Xiao-Hong Dong, Hao Liu, Xin |
| contents | The Josephson diode effect (JDE), a nonreciprocal supercurrent, is a cornerstone for future dissipationless electronics, yet achieving high efficiency in a simple device architecture remains a significant challenge. Here, we theoretically investigate the JDE in a junction based on monolayer 1T'-WTe$_2$. We first establish that different edge terminations of a WTe$_2$ nanoribbon lead to diverse electronic band structures, some of which host asymmetric edge states even with crystallographically equivalent terminations. This intrinsic asymmetry provides a natural platform for realizing the JDE. With a WTe$_2$-based Josephson junction, we demonstrate a significant JDE arising purely from these asymmetric edges when time-reversal symmetry is broken by a magnetic flux. While the efficiency of this edge-state-driven JDE is inherently limited, we discover a crucial mechanism for its enhancement: by tuning the chemical potential into the bulk bands, the interplay between edge and bulk transport channels boosts the maximum diode efficiency more than $50\%$. Furthermore, we show that this enhanced JDE is robust against moderate edge disorder. Our findings not only propose a novel route to achieve a highly efficient JDE using intrinsic material properties but also highlight the potential of engineered WTe$_2$ systems for developing advanced superconducting quantum devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_21357 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Edge dependent Josephson Diode effect in WTe$_{2}$-Based Josephson junction Guo, Guo-Liang Pan, Xiao-Hong Dong, Hao Liu, Xin Superconductivity The Josephson diode effect (JDE), a nonreciprocal supercurrent, is a cornerstone for future dissipationless electronics, yet achieving high efficiency in a simple device architecture remains a significant challenge. Here, we theoretically investigate the JDE in a junction based on monolayer 1T'-WTe$_2$. We first establish that different edge terminations of a WTe$_2$ nanoribbon lead to diverse electronic band structures, some of which host asymmetric edge states even with crystallographically equivalent terminations. This intrinsic asymmetry provides a natural platform for realizing the JDE. With a WTe$_2$-based Josephson junction, we demonstrate a significant JDE arising purely from these asymmetric edges when time-reversal symmetry is broken by a magnetic flux. While the efficiency of this edge-state-driven JDE is inherently limited, we discover a crucial mechanism for its enhancement: by tuning the chemical potential into the bulk bands, the interplay between edge and bulk transport channels boosts the maximum diode efficiency more than $50\%$. Furthermore, we show that this enhanced JDE is robust against moderate edge disorder. Our findings not only propose a novel route to achieve a highly efficient JDE using intrinsic material properties but also highlight the potential of engineered WTe$_2$ systems for developing advanced superconducting quantum devices. |
| title | Edge dependent Josephson Diode effect in WTe$_{2}$-Based Josephson junction |
| topic | Superconductivity |
| url | https://arxiv.org/abs/2508.21357 |