Tunable Two-Dimensional Electron Gas at the Interfaces of Ferroelectric Potassium Tantalate Niobates
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arXiv
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| Autori principali: | , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| _version_ | 1866914013440376832 |
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| author | Lv, Jiaxin Li, Silan Duan, Chenhao Wang, Shuanhu Yan, Hong Jin, Kexin |
| author_facet | Lv, Jiaxin Li, Silan Duan, Chenhao Wang, Shuanhu Yan, Hong Jin, Kexin |
| contents | The heterointerfaces at complex oxides have emerged as a promising platform for discovering novel physical phenomena and advancing integrated sensing, storage, and computing technologies. Nevertheless, achieving precise control over a two-dimensional electron gas (2DEG) in a ferroelectric oxide-based field-effect transistor (FET) configuration remains challenging. Here, we firstly demonstrate a tunable 2DEG system fabricated by depositing an amorphous LaAlO3(LAO) film onto a (001)-oriented ferroelectric potassium tantalate niobate substrate. Interfaces grown under high-temperature and high-oxygen-pressure conditions exhibit a good metallic conduction. Notably, well-defined metallic 2DEGs displaying pronounced hysteresis and persistent electric-field-modulated resistance are observed below 108 K, achieving a resistance modulation of 11.6% at 7 K. These results underscore the potential for extending such behavior to other oxide-based 2DEG systems and facilitate further exploration of ferroelectric metals in complex oxide heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_21359 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Tunable Two-Dimensional Electron Gas at the Interfaces of Ferroelectric Potassium Tantalate Niobates Lv, Jiaxin Li, Silan Duan, Chenhao Wang, Shuanhu Yan, Hong Jin, Kexin Materials Science Mesoscale and Nanoscale Physics The heterointerfaces at complex oxides have emerged as a promising platform for discovering novel physical phenomena and advancing integrated sensing, storage, and computing technologies. Nevertheless, achieving precise control over a two-dimensional electron gas (2DEG) in a ferroelectric oxide-based field-effect transistor (FET) configuration remains challenging. Here, we firstly demonstrate a tunable 2DEG system fabricated by depositing an amorphous LaAlO3(LAO) film onto a (001)-oriented ferroelectric potassium tantalate niobate substrate. Interfaces grown under high-temperature and high-oxygen-pressure conditions exhibit a good metallic conduction. Notably, well-defined metallic 2DEGs displaying pronounced hysteresis and persistent electric-field-modulated resistance are observed below 108 K, achieving a resistance modulation of 11.6% at 7 K. These results underscore the potential for extending such behavior to other oxide-based 2DEG systems and facilitate further exploration of ferroelectric metals in complex oxide heterostructures. |
| title | Tunable Two-Dimensional Electron Gas at the Interfaces of Ferroelectric Potassium Tantalate Niobates |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2508.21359 |