Signatures of two ferromagnetic states and goniopolarity in LaCrGe3 in the Hall effect

Fuente: arXiv
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Autori principali: Sariket, Modhumita, Islam, Najrul, Jana, Ayan, Kumar, Manoranjan, Shamim, Saquib, Kumar, Nitesh
Natura: Preprint
Pubblicazione: 2025
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author Sariket, Modhumita
Islam, Najrul
Jana, Ayan
Kumar, Manoranjan
Shamim, Saquib
Kumar, Nitesh
author_facet Sariket, Modhumita
Islam, Najrul
Jana, Ayan
Kumar, Manoranjan
Shamim, Saquib
Kumar, Nitesh
contents LaCrGe3 has become a playground to understand quantum critical phenomena in ferromagnetic (FM) materials. It has also garnered attention due to its peculiar two FM phases. Here, we demonstrate the presence of these phases using the Hall effect. Continuous temperature-dependent Hall resistivity measurements at fixed magnetic fields clearly demonstrate the presence of these phases, regardless of the direction of the applied magnetic field. The remanent Hall resistivity and Hall coefficient undergo a maximum and a minimum, respectively, at the boundary between the two phases. We observe significantly large anomalous Hall conductivity of 1160 ohm-1cm-1 at 2 K when the magnetic field is applied along the magnetic easy axis, which is dominated by intrinsic effects, at least in the low-temperature FM phase. In the paramagnetic (PM) phase, hexagonal LaCrGe3 exhibits opposite charge carrier polarities along different crystallographic directions, attributed to the anisotropic Fermi surface geometry, a phenomenon known as "goniopolarity". The coexistence of goniopolar transport and unconventional magnetic phases may lead this material as a promising candidate for future electronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2508_21508
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Signatures of two ferromagnetic states and goniopolarity in LaCrGe3 in the Hall effect
Sariket, Modhumita
Islam, Najrul
Jana, Ayan
Kumar, Manoranjan
Shamim, Saquib
Kumar, Nitesh
Materials Science
LaCrGe3 has become a playground to understand quantum critical phenomena in ferromagnetic (FM) materials. It has also garnered attention due to its peculiar two FM phases. Here, we demonstrate the presence of these phases using the Hall effect. Continuous temperature-dependent Hall resistivity measurements at fixed magnetic fields clearly demonstrate the presence of these phases, regardless of the direction of the applied magnetic field. The remanent Hall resistivity and Hall coefficient undergo a maximum and a minimum, respectively, at the boundary between the two phases. We observe significantly large anomalous Hall conductivity of 1160 ohm-1cm-1 at 2 K when the magnetic field is applied along the magnetic easy axis, which is dominated by intrinsic effects, at least in the low-temperature FM phase. In the paramagnetic (PM) phase, hexagonal LaCrGe3 exhibits opposite charge carrier polarities along different crystallographic directions, attributed to the anisotropic Fermi surface geometry, a phenomenon known as "goniopolarity". The coexistence of goniopolar transport and unconventional magnetic phases may lead this material as a promising candidate for future electronic devices.
title Signatures of two ferromagnetic states and goniopolarity in LaCrGe3 in the Hall effect
topic Materials Science
url https://arxiv.org/abs/2508.21508