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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2508.21537 |
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| _version_ | 1866911225314541568 |
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| author | Hilbrunner, Constantin Meyer, Tobias Malindretos, Joerg Rizzi, Angela |
| author_facet | Hilbrunner, Constantin Meyer, Tobias Malindretos, Joerg Rizzi, Angela |
| contents | 2H-TaS$_2$ few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825$^{\circ}$C induces best structural properties of the overlayer, as revealed by in-situ electron diffraction (RHEED and LEED). The 2D-overlayer grows unstrained right after deposition of a monolayer. However, evidence of pits at the interface is provided by scanning transmission electron microscopy, most probably due to GaN thermal decomposition at the high growth temperature. In-situ x-ray photoemission spectroscopy shows core level shifts that are consistently related to electron transfer from the n-GaN(0001) to the 2H-TaS$_2$ epitaxial layer as well as the formation of a high concentration of nitrogen vacancies close to the interface. Further, no chemical reaction at the interface between the substrate and the grown TaS$_2$ overlayer is deduced from XPS, which corroborates the possibility of integration of 2D 2H-TaS$_2$ with an important 3D semiconducting material like GaN. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_21537 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Molecular Beam Epitaxy of 2H-TaS$_2$ few-layers on GaN(0001) Hilbrunner, Constantin Meyer, Tobias Malindretos, Joerg Rizzi, Angela Materials Science 2H-TaS$_2$ few layers have been grown epitaxially onto GaN(0001). A high substrate growth temperature of 825$^{\circ}$C induces best structural properties of the overlayer, as revealed by in-situ electron diffraction (RHEED and LEED). The 2D-overlayer grows unstrained right after deposition of a monolayer. However, evidence of pits at the interface is provided by scanning transmission electron microscopy, most probably due to GaN thermal decomposition at the high growth temperature. In-situ x-ray photoemission spectroscopy shows core level shifts that are consistently related to electron transfer from the n-GaN(0001) to the 2H-TaS$_2$ epitaxial layer as well as the formation of a high concentration of nitrogen vacancies close to the interface. Further, no chemical reaction at the interface between the substrate and the grown TaS$_2$ overlayer is deduced from XPS, which corroborates the possibility of integration of 2D 2H-TaS$_2$ with an important 3D semiconducting material like GaN. |
| title | Molecular Beam Epitaxy of 2H-TaS$_2$ few-layers on GaN(0001) |
| topic | Materials Science |
| url | https://arxiv.org/abs/2508.21537 |