Electrical Control of Excitons in Bare-MoSe2 and MoSe2/NbSe2 Heterostructure
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arXiv
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| Natura: | Preprint |
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2025
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| author | Patra, Atanu Kaushik, Vishakha Sepas, Ali Sahoo, Subhamoy Federolf, Mathias Mayer, Christian G. Klembt, Sebastian Emmerling, Monika Betzold, Simon Tongay, Seth Ariel Hartmann, Fabian Pedersen, Thomas Garm Höfling, Sven |
| author_facet | Patra, Atanu Kaushik, Vishakha Sepas, Ali Sahoo, Subhamoy Federolf, Mathias Mayer, Christian G. Klembt, Sebastian Emmerling, Monika Betzold, Simon Tongay, Seth Ariel Hartmann, Fabian Pedersen, Thomas Garm Höfling, Sven |
| contents | Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, owing to their strong excitonic responses and atomic thickness. Controlling their light emission electrically is a crucial step towards realizing practical nanoscale optoelectronic devices such as light-emitting diodes and optical modulators. However, photoluminescence (PL) quenching in van der Waals TMDC/metal heterostructures, caused by ultrafast interlayer charge or energy transfer, impedes such electrical modulation. Here, we investigate monolayer-MoSe2/bulk-NbSe2 heterostructures and demonstrate that a vertical electric field can effectively recover the PL intensity up to ~ 80% of bare-MoSe2. Furthermore, our analysis reveals that the room temperature PL intensity can be tuned by nearly three orders of magnitude in bare-MoSe2 and by about one order of magnitude in MoSe2/NbSe2 heterostructures. First-principles calculations incorporating spin-orbit coupling reveal that the perpendicular electric fields drive a transition from a direct to an indirect bandgap, fundamentally altering the optical response in the heterostructure. Unlike bare-MoSe2, the heterostructure exhibits a pronounced thermal dependence of the enhancement factor, implying that exciton lifetime dominates over interfacial transfer processes. Our findings demonstrate reversible, electric-field-driven PL control at a TMDC/metal interface, providing a pathway to electrically tunable light emission and improved contact engineering in two-dimensional optoelectronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2508_21781 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Electrical Control of Excitons in Bare-MoSe2 and MoSe2/NbSe2 Heterostructure Patra, Atanu Kaushik, Vishakha Sepas, Ali Sahoo, Subhamoy Federolf, Mathias Mayer, Christian G. Klembt, Sebastian Emmerling, Monika Betzold, Simon Tongay, Seth Ariel Hartmann, Fabian Pedersen, Thomas Garm Höfling, Sven Applied Physics Monolayer transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, owing to their strong excitonic responses and atomic thickness. Controlling their light emission electrically is a crucial step towards realizing practical nanoscale optoelectronic devices such as light-emitting diodes and optical modulators. However, photoluminescence (PL) quenching in van der Waals TMDC/metal heterostructures, caused by ultrafast interlayer charge or energy transfer, impedes such electrical modulation. Here, we investigate monolayer-MoSe2/bulk-NbSe2 heterostructures and demonstrate that a vertical electric field can effectively recover the PL intensity up to ~ 80% of bare-MoSe2. Furthermore, our analysis reveals that the room temperature PL intensity can be tuned by nearly three orders of magnitude in bare-MoSe2 and by about one order of magnitude in MoSe2/NbSe2 heterostructures. First-principles calculations incorporating spin-orbit coupling reveal that the perpendicular electric fields drive a transition from a direct to an indirect bandgap, fundamentally altering the optical response in the heterostructure. Unlike bare-MoSe2, the heterostructure exhibits a pronounced thermal dependence of the enhancement factor, implying that exciton lifetime dominates over interfacial transfer processes. Our findings demonstrate reversible, electric-field-driven PL control at a TMDC/metal interface, providing a pathway to electrically tunable light emission and improved contact engineering in two-dimensional optoelectronic devices. |
| title | Electrical Control of Excitons in Bare-MoSe2 and MoSe2/NbSe2 Heterostructure |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2508.21781 |