Probing the Nanoscale Excitonic Landscape and Quantum Confinement of Excitons in Gated Monolayer Semiconductors
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866912561994137600 |
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| author | Wu, Yueh-Chun Dryzhakov, Bogdan Zhao, Huan Vlassiouk, Ivan Kelley, Kyle Taniguchi, Takashi Watanabe, Kenji Yan, Jun Lawrie, Benjamin |
| author_facet | Wu, Yueh-Chun Dryzhakov, Bogdan Zhao, Huan Vlassiouk, Ivan Kelley, Kyle Taniguchi, Takashi Watanabe, Kenji Yan, Jun Lawrie, Benjamin |
| contents | Engineering and probing excitonic properties at the nanoscale remains a central challenge in quantum photonics and optoelectronics. While exciton confinement via electrical control and strain engineering has been demonstrated in 2D semiconductors, substantial nanoscale heterogeneity limits the scalability of 2D quantum photonic device architectures. In this work, we use cathodoluminescence spectroscopy to probe the excitonic landscape of monolayer $WS_2$ under electrostatic gating. Exploiting the high spatial resolution of the converged electron beam, we resolve a homojunction arising between gated and ungated regions. Moreover, we reveal an exciton confinement channel arising from an unconventional doping mechanism driven by the interplay between the electron beam and the applied gate fields. These findings offer new insights into the optoelectronic behavior of monolayer semiconductors under the combined influence of electron-beam excitation and electrostatic gating. Our approach provides a pathway for exciton manipulation at the nanoscale and opens opportunities for controlling quantum-confined exciton transport in two-dimensional materials. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2509_00453 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Probing the Nanoscale Excitonic Landscape and Quantum Confinement of Excitons in Gated Monolayer Semiconductors Wu, Yueh-Chun Dryzhakov, Bogdan Zhao, Huan Vlassiouk, Ivan Kelley, Kyle Taniguchi, Takashi Watanabe, Kenji Yan, Jun Lawrie, Benjamin Mesoscale and Nanoscale Physics Engineering and probing excitonic properties at the nanoscale remains a central challenge in quantum photonics and optoelectronics. While exciton confinement via electrical control and strain engineering has been demonstrated in 2D semiconductors, substantial nanoscale heterogeneity limits the scalability of 2D quantum photonic device architectures. In this work, we use cathodoluminescence spectroscopy to probe the excitonic landscape of monolayer $WS_2$ under electrostatic gating. Exploiting the high spatial resolution of the converged electron beam, we resolve a homojunction arising between gated and ungated regions. Moreover, we reveal an exciton confinement channel arising from an unconventional doping mechanism driven by the interplay between the electron beam and the applied gate fields. These findings offer new insights into the optoelectronic behavior of monolayer semiconductors under the combined influence of electron-beam excitation and electrostatic gating. Our approach provides a pathway for exciton manipulation at the nanoscale and opens opportunities for controlling quantum-confined exciton transport in two-dimensional materials. |
| title | Probing the Nanoscale Excitonic Landscape and Quantum Confinement of Excitons in Gated Monolayer Semiconductors |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2509.00453 |