Transitioning from Silicon to Carbon Nanotube based transistors
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arXiv
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| Format: | Preprint |
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2025
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| author | Bharadwaj, Suhas Suresh Thovelil, Reuben Thomas Chembattammal, Rohith Mishra, Sradha Sahoo, Sunit Dave, Himnish S., Karthik Jaisinghani, Kabir |
| author_facet | Bharadwaj, Suhas Suresh Thovelil, Reuben Thomas Chembattammal, Rohith Mishra, Sradha Sahoo, Sunit Dave, Himnish S., Karthik Jaisinghani, Kabir |
| contents | Carbon Nanotubes have shown to be an attractive option in the race to find a replacement to silicon-based transistors, due to its high electrical conductivity, extraordinary mechanical strength, and thermal conductivity. However, challenges with regards to controlling the purity and chirality of CNTs have raised doubts if the mass production of these transistors are even viable. This paper explores the challenges of scalability and proposes methods such as Liquid and Gas phase oxidative methods and microwave heating to tackle the problem of metal impurities found within CNTs and the methods of Catalyst Engineering and Chemical Vapor Deposition to control the chirality of CNTs. It also suggests techniques such as Lithography, Screen Printing and Stack Engineering to facilitate the large-scale production of CNT transistors. This paper also attempts to explore the methods of Laser Ablation and Arc Discharge that allows for the synthesis of CNTs of pure quality and high yield further facilitating the rise of mass production of CNT transistors. The feasibility and challenges relating to the integration of CNT transistors with already pre-existing circuitry was also investigated and the methods of annealing and potassium doping were studied and analyzed. The main aim of this paper is providing a comprehensive guide to allow for the mass production and rapid integration of CNT transistors into the semi-conductor market. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_00947 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Transitioning from Silicon to Carbon Nanotube based transistors Bharadwaj, Suhas Suresh Thovelil, Reuben Thomas Chembattammal, Rohith Mishra, Sradha Sahoo, Sunit Dave, Himnish S., Karthik Jaisinghani, Kabir Mesoscale and Nanoscale Physics Applied Physics Carbon Nanotubes have shown to be an attractive option in the race to find a replacement to silicon-based transistors, due to its high electrical conductivity, extraordinary mechanical strength, and thermal conductivity. However, challenges with regards to controlling the purity and chirality of CNTs have raised doubts if the mass production of these transistors are even viable. This paper explores the challenges of scalability and proposes methods such as Liquid and Gas phase oxidative methods and microwave heating to tackle the problem of metal impurities found within CNTs and the methods of Catalyst Engineering and Chemical Vapor Deposition to control the chirality of CNTs. It also suggests techniques such as Lithography, Screen Printing and Stack Engineering to facilitate the large-scale production of CNT transistors. This paper also attempts to explore the methods of Laser Ablation and Arc Discharge that allows for the synthesis of CNTs of pure quality and high yield further facilitating the rise of mass production of CNT transistors. The feasibility and challenges relating to the integration of CNT transistors with already pre-existing circuitry was also investigated and the methods of annealing and potassium doping were studied and analyzed. The main aim of this paper is providing a comprehensive guide to allow for the mass production and rapid integration of CNT transistors into the semi-conductor market. |
| title | Transitioning from Silicon to Carbon Nanotube based transistors |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2509.00947 |