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| Hauptverfasser: | , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2025
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| Online-Zugang: | https://arxiv.org/abs/2509.02224 |
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| _version_ | 1866908515460710400 |
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| author | González-Rios, Jorge L. Hurtado, Juan C. Cruz Moreno, Robson L. Vázquez, Diego |
| author_facet | González-Rios, Jorge L. Hurtado, Juan C. Cruz Moreno, Robson L. Vázquez, Diego |
| contents | This paper presents the analysis, design, fabrication, and measurement of an integrated low-noise amplifier (LNA) implemented using a 130 nm CMOS technology, operating in the 2.4 GHz band. The LNA is a crucial component in the performance of receivers, particularly in integrated receivers. The proposed LNA was designed to meet the specifications of the IEEE 802.15.4 standard. Post-layout simulation results, including pads with electrostatic discharge (ESD) protection, are as follows: gain of 10.7 dB, noise figure of 2.7 dB, third-order input intercept point (IIP3) of 0.9 dBm, input and output impedance matching better than -20 dB with respect to 50~$Ω$ terminations, with a power consumption of 505 $μ$W powered from a 1.2 V supply. The obtained results fall within the range of those recently reported for the same topology and operating frequency. The measured scattering parameters (S-parameters) are consistent with the simulation results. This work contributes to the development of a new research line in Cuba on the design of radio-frequency (RF) integrated circuits. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_02224 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | 2.4-GHz Integrated CMOS Low-Noise Amplifier (English Version) González-Rios, Jorge L. Hurtado, Juan C. Cruz Moreno, Robson L. Vázquez, Diego Systems and Control This paper presents the analysis, design, fabrication, and measurement of an integrated low-noise amplifier (LNA) implemented using a 130 nm CMOS technology, operating in the 2.4 GHz band. The LNA is a crucial component in the performance of receivers, particularly in integrated receivers. The proposed LNA was designed to meet the specifications of the IEEE 802.15.4 standard. Post-layout simulation results, including pads with electrostatic discharge (ESD) protection, are as follows: gain of 10.7 dB, noise figure of 2.7 dB, third-order input intercept point (IIP3) of 0.9 dBm, input and output impedance matching better than -20 dB with respect to 50~$Ω$ terminations, with a power consumption of 505 $μ$W powered from a 1.2 V supply. The obtained results fall within the range of those recently reported for the same topology and operating frequency. The measured scattering parameters (S-parameters) are consistent with the simulation results. This work contributes to the development of a new research line in Cuba on the design of radio-frequency (RF) integrated circuits. |
| title | 2.4-GHz Integrated CMOS Low-Noise Amplifier (English Version) |
| topic | Systems and Control |
| url | https://arxiv.org/abs/2509.02224 |