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| Autori principali: | , , , , , , , , |
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| Natura: | Preprint |
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2025
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| Accesso online: | https://arxiv.org/abs/2509.02229 |
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| _version_ | 1866916930705686528 |
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| author | Mondal, Soumyajyoti Haque, Asraful De, Binoy Krishna Parate, Shubham Kumar Yadav, Pramod Kumar Basak, Arup Tiwari, Kaushal Prasad, Bhagwati Nukala, Pavan |
| author_facet | Mondal, Soumyajyoti Haque, Asraful De, Binoy Krishna Parate, Shubham Kumar Yadav, Pramod Kumar Basak, Arup Tiwari, Kaushal Prasad, Bhagwati Nukala, Pavan |
| contents | Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO$_2$, with cationic doping widely employed to introduce such defects. In contrast, systematic studies on anionic doping to induce ferroelectricity remain largely in nascent stages. On epitaxial Y:HfO$_2$ grown on ITO buffered YSZ substrates that crystallize in a mixed monoclinic (non-polar) and orthorhombic (polar) phases, we introduce nitrogen doping via post deposition rapid thermal annealing (RTA) in N$_2$ atmosphere at 900~$^\circ$C. As the annealing time increases from 10s to 4min, the monoclinic phase fraction diminishes, enabling the emergence of well-defined ferroelectric loops in films annealed beyond 2~min. We clearly show that this is an effect of nitrogen incorporation (doping) into the samples through a suite of structure-property correlation measurements including x-ray photoelectron spectroscopy. These results reveal that nitrogen actively participates in the RTA-induced phase stabilization, enabling ferroelectricity in epitaxial Y:HfO$_2$ without sacrificing crystallographic coherence, providing a viable pathway for structure-property correlation studies and a model system to study opto-electronic devices integrated with ferroelectrics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_02229 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Non-Ferroelectric to Ferroelectric Phase Transition in epitaxial Y:HfO$_2$ via Rapid Thermal Annealing Induced Nitrogen Doping Mondal, Soumyajyoti Haque, Asraful De, Binoy Krishna Parate, Shubham Kumar Yadav, Pramod Kumar Basak, Arup Tiwari, Kaushal Prasad, Bhagwati Nukala, Pavan Materials Science Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO$_2$, with cationic doping widely employed to introduce such defects. In contrast, systematic studies on anionic doping to induce ferroelectricity remain largely in nascent stages. On epitaxial Y:HfO$_2$ grown on ITO buffered YSZ substrates that crystallize in a mixed monoclinic (non-polar) and orthorhombic (polar) phases, we introduce nitrogen doping via post deposition rapid thermal annealing (RTA) in N$_2$ atmosphere at 900~$^\circ$C. As the annealing time increases from 10s to 4min, the monoclinic phase fraction diminishes, enabling the emergence of well-defined ferroelectric loops in films annealed beyond 2~min. We clearly show that this is an effect of nitrogen incorporation (doping) into the samples through a suite of structure-property correlation measurements including x-ray photoelectron spectroscopy. These results reveal that nitrogen actively participates in the RTA-induced phase stabilization, enabling ferroelectricity in epitaxial Y:HfO$_2$ without sacrificing crystallographic coherence, providing a viable pathway for structure-property correlation studies and a model system to study opto-electronic devices integrated with ferroelectrics. |
| title | Non-Ferroelectric to Ferroelectric Phase Transition in epitaxial Y:HfO$_2$ via Rapid Thermal Annealing Induced Nitrogen Doping |
| topic | Materials Science |
| url | https://arxiv.org/abs/2509.02229 |