Etching-free dual-lift-off for direct patterning of epitaxial oxide thin films
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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| author | Qin, Jiayi See, Josephine Si Yu Liu, Yanran Wang, Xueyan Zhao, Wenhai He, Yang Ding, Jianbo Wu, Yilin Wang, Shanhu Han, Huiping Khan, Afzal Liu, Shuya Yang, Sheng'an Zhang, Hui Li, Jiangnan Chen, Qingming Xie, Jiyang Ma, Ji Hu, Wanbiao Yi, Jianhong Wu, Liang Wang, X. Renshaw |
| author_facet | Qin, Jiayi See, Josephine Si Yu Liu, Yanran Wang, Xueyan Zhao, Wenhai He, Yang Ding, Jianbo Wu, Yilin Wang, Shanhu Han, Huiping Khan, Afzal Liu, Shuya Yang, Sheng'an Zhang, Hui Li, Jiangnan Chen, Qingming Xie, Jiyang Ma, Ji Hu, Wanbiao Yi, Jianhong Wu, Liang Wang, X. Renshaw |
| contents | Although monocrystalline oxide films offer broad functional capabilities, their practical use is hampered by challenges in patterning. Traditional patterning relies on etching, which can be costly and prone to issues like film or substrate damage, under-etching, over-etching, and lateral etching. In this study, we introduce a dual-lift-off method for direct patterning of oxide films, circumventing the etching process and associated issues. Our method involves an initial lift-off of amorphous Sr$_3$Al$_2$O$_6$ or Sr$_4$Al$_2$O$_7$ ($a$SAO) through stripping the photoresist, followed by a subsequent lift-off of the functional oxide thin films by dissolving the $a$SAO layer. $a$SAO functions as a ``high-temperature photoresist", making it compatible with the high-temperature growth of monocrystalline oxides. Using this method, patterned ferromagnetic La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ and ferroelectric BiFeO$_3$ were fabricated, accurately mirroring the shape of the photoresist. Our study presents a straightforward, flexible, precise, environmentally friendly, and cost-effective method for patterning high-quality oxide thin films. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_02618 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Etching-free dual-lift-off for direct patterning of epitaxial oxide thin films Qin, Jiayi See, Josephine Si Yu Liu, Yanran Wang, Xueyan Zhao, Wenhai He, Yang Ding, Jianbo Wu, Yilin Wang, Shanhu Han, Huiping Khan, Afzal Liu, Shuya Yang, Sheng'an Zhang, Hui Li, Jiangnan Chen, Qingming Xie, Jiyang Ma, Ji Hu, Wanbiao Yi, Jianhong Wu, Liang Wang, X. Renshaw Materials Science Mesoscale and Nanoscale Physics Although monocrystalline oxide films offer broad functional capabilities, their practical use is hampered by challenges in patterning. Traditional patterning relies on etching, which can be costly and prone to issues like film or substrate damage, under-etching, over-etching, and lateral etching. In this study, we introduce a dual-lift-off method for direct patterning of oxide films, circumventing the etching process and associated issues. Our method involves an initial lift-off of amorphous Sr$_3$Al$_2$O$_6$ or Sr$_4$Al$_2$O$_7$ ($a$SAO) through stripping the photoresist, followed by a subsequent lift-off of the functional oxide thin films by dissolving the $a$SAO layer. $a$SAO functions as a ``high-temperature photoresist", making it compatible with the high-temperature growth of monocrystalline oxides. Using this method, patterned ferromagnetic La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ and ferroelectric BiFeO$_3$ were fabricated, accurately mirroring the shape of the photoresist. Our study presents a straightforward, flexible, precise, environmentally friendly, and cost-effective method for patterning high-quality oxide thin films. |
| title | Etching-free dual-lift-off for direct patterning of epitaxial oxide thin films |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2509.02618 |