$P$-type Ru$_2$Ti$_{1-x}$Hf$_x$Si full-Heusler bulk thermoelectrics with $zT = 0.7$
Fuente:
arXiv
Guardado en:
| Autores principales: | , , , , , , |
|---|---|
| Formato: | Preprint |
| Publicado: |
2025
|
| Materias: | |
| Acceso en línea: | |
| Etiquetas: |
Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
| _version_ | 1866909768054996992 |
|---|---|
| author | Garmroudi, Fabian Serhiienko, Illia Parzer, Michael Pustogow, Andrej Podloucky, Raimund Mori, Takao Bauer, Ernst |
| author_facet | Garmroudi, Fabian Serhiienko, Illia Parzer, Michael Pustogow, Andrej Podloucky, Raimund Mori, Takao Bauer, Ernst |
| contents | Heusler compounds have emerged as important thermoelectric materials due to their combination of promising electronic transport properties, mechanical robustness and chemical stability -- key aspects for practical device integration. While a wide range of XYZ-type half-Heusler compounds have been studied for high-temperature applications, X$_2$YZ-type full-Heuslers, often characterized by narrower band gaps, may offer potential advantages at different temperature regimes but remain less explored. In this work, we report the discovery of $p$-type Ru$_2$Ti$_{1-x}$Hf$_x$Si full-Heusler thermoelectrics, exhibiting a high figure of merit $zT \sim 0.7$ over a broad range of temperatures $700-1000$ K. These results not only represent the largest values known to date among full-Heusler materials but confirm earlier theoretical predictions that $p$-type Ru$_2$TiSi systems would be superior to their $n$-type counterparts. Moreover, using a two-band model, we unveil electronic structure changes induced by the Hf substitution at the Ti site and outline strategies to further improve $zT$ up to $zT > 1$. Our findings highlight the untapped potential of new semiconducting full-Heusler phases and the crucial need for continued exploration of this rich materials class for thermoelectric applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_02765 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | $P$-type Ru$_2$Ti$_{1-x}$Hf$_x$Si full-Heusler bulk thermoelectrics with $zT = 0.7$ Garmroudi, Fabian Serhiienko, Illia Parzer, Michael Pustogow, Andrej Podloucky, Raimund Mori, Takao Bauer, Ernst Materials Science Heusler compounds have emerged as important thermoelectric materials due to their combination of promising electronic transport properties, mechanical robustness and chemical stability -- key aspects for practical device integration. While a wide range of XYZ-type half-Heusler compounds have been studied for high-temperature applications, X$_2$YZ-type full-Heuslers, often characterized by narrower band gaps, may offer potential advantages at different temperature regimes but remain less explored. In this work, we report the discovery of $p$-type Ru$_2$Ti$_{1-x}$Hf$_x$Si full-Heusler thermoelectrics, exhibiting a high figure of merit $zT \sim 0.7$ over a broad range of temperatures $700-1000$ K. These results not only represent the largest values known to date among full-Heusler materials but confirm earlier theoretical predictions that $p$-type Ru$_2$TiSi systems would be superior to their $n$-type counterparts. Moreover, using a two-band model, we unveil electronic structure changes induced by the Hf substitution at the Ti site and outline strategies to further improve $zT$ up to $zT > 1$. Our findings highlight the untapped potential of new semiconducting full-Heusler phases and the crucial need for continued exploration of this rich materials class for thermoelectric applications. |
| title | $P$-type Ru$_2$Ti$_{1-x}$Hf$_x$Si full-Heusler bulk thermoelectrics with $zT = 0.7$ |
| topic | Materials Science |
| url | https://arxiv.org/abs/2509.02765 |