High-$Q$ membrane resonators using ultra-high-stress crystalline TiN films
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866912781474725888 |
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| author | Matsuyama, Yuki Shirai, Shotaro Nakamura, Ippei Tokunari, Masao Terai, Hirotaka Hishida, Yuji Sasaki, Ryo Tominaga, Yusuke Noguchi, Atsushi |
| author_facet | Matsuyama, Yuki Shirai, Shotaro Nakamura, Ippei Tokunari, Masao Terai, Hirotaka Hishida, Yuji Sasaki, Ryo Tominaga, Yusuke Noguchi, Atsushi |
| contents | High-quality-factor ($Q$) mechanical resonators are essential components for precise sensing and control of mechanical motion at a quantum level. While amorphous materials such as SiN have been widely used in high-$Q$ mechanical resonators utilizing stress-induced dissipation dilution, crystalline materials have emerging potential to achieve higher quality factors by combining low intrinsic loss and high tensile stress. In this paper, we demonstrate high-Q membrane resonators using ultra-high-stress crystalline TiN. Our membrane resonator exhibits a tensile stress exceeding 2.3 GPa and a quality factor of $Q = 8.0 \times 10^6$ at 2.2 K. By estimating the dilution factor, we infer that our TiN resonator has a intrinsic quality factor comparable to that of SiN membrane resonators. With its ultra-high stress and crystalline properties, our TiN films can serve as a powerful tool for opto- and electromechanical systems, offering highly dissipation-diluted mechanical resonators. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_02987 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High-$Q$ membrane resonators using ultra-high-stress crystalline TiN films Matsuyama, Yuki Shirai, Shotaro Nakamura, Ippei Tokunari, Masao Terai, Hirotaka Hishida, Yuji Sasaki, Ryo Tominaga, Yusuke Noguchi, Atsushi Mesoscale and Nanoscale Physics Materials Science High-quality-factor ($Q$) mechanical resonators are essential components for precise sensing and control of mechanical motion at a quantum level. While amorphous materials such as SiN have been widely used in high-$Q$ mechanical resonators utilizing stress-induced dissipation dilution, crystalline materials have emerging potential to achieve higher quality factors by combining low intrinsic loss and high tensile stress. In this paper, we demonstrate high-Q membrane resonators using ultra-high-stress crystalline TiN. Our membrane resonator exhibits a tensile stress exceeding 2.3 GPa and a quality factor of $Q = 8.0 \times 10^6$ at 2.2 K. By estimating the dilution factor, we infer that our TiN resonator has a intrinsic quality factor comparable to that of SiN membrane resonators. With its ultra-high stress and crystalline properties, our TiN films can serve as a powerful tool for opto- and electromechanical systems, offering highly dissipation-diluted mechanical resonators. |
| title | High-$Q$ membrane resonators using ultra-high-stress crystalline TiN films |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2509.02987 |