Switching topological states via uniaxial strain in 2D materials

Fuente: arXiv
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Main Authors: Sanchez, Joshua J., Aurora, Raagya, Bennett, Daniel, Larson, Daniel T., Kaxiras, Efthimios, Comin, Riccardo
Format: Preprint
Published: 2025
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author Sanchez, Joshua J.
Aurora, Raagya
Bennett, Daniel
Larson, Daniel T.
Kaxiras, Efthimios
Comin, Riccardo
author_facet Sanchez, Joshua J.
Aurora, Raagya
Bennett, Daniel
Larson, Daniel T.
Kaxiras, Efthimios
Comin, Riccardo
contents In topological materials, dissipationless edge currents are protected against local defect scattering by the bulk inverted band structure and band gap. We propose that large uniaxial strain can effectively switch a 2D Chern insulator to a topologically trivial state. Further, we suggest that the boundary between strained and unstrained regions of a sample can act as a new edge for dissipationless current flow. Using density functional theory (DFT) calculations we demonstrate the strain-tunability of the monolayer MnBi2S2T2 band structure and the switching of the Chern number. We combine uniaxial and biaxial strain results to map out the strain-tuned topological phase diagram.
format Preprint
id arxiv_https___arxiv_org_abs_2509_03854
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Switching topological states via uniaxial strain in 2D materials
Sanchez, Joshua J.
Aurora, Raagya
Bennett, Daniel
Larson, Daniel T.
Kaxiras, Efthimios
Comin, Riccardo
Strongly Correlated Electrons
In topological materials, dissipationless edge currents are protected against local defect scattering by the bulk inverted band structure and band gap. We propose that large uniaxial strain can effectively switch a 2D Chern insulator to a topologically trivial state. Further, we suggest that the boundary between strained and unstrained regions of a sample can act as a new edge for dissipationless current flow. Using density functional theory (DFT) calculations we demonstrate the strain-tunability of the monolayer MnBi2S2T2 band structure and the switching of the Chern number. We combine uniaxial and biaxial strain results to map out the strain-tuned topological phase diagram.
title Switching topological states via uniaxial strain in 2D materials
topic Strongly Correlated Electrons
url https://arxiv.org/abs/2509.03854