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| Autores principales: | , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2509.04042 |
| Etiquetas: |
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- $α$-Sn exhibits a rich topological phase diagram, yet experimental methods to tune and distinguish these phases remain limited. Here, we investigated the helicity-dependent photocurrent (HDPC) in $α$-Sn films of varying thickness grown on CdTe(110) by molecular beam epitaxy. The HDPC of the 5 nm $α$-Sn film shows an odd-function dependence on incident angle, whereas that of the 10 and 30 nm films exhibit an even-function dependence. Combined with high-resolution transmission electron microscopy (HR-TEM), point-group symmetry analysis, and first-principles calculations, it is revealed that a thickness-driven topological phase transition from a two dimensional (2D) to a three dimensional (3D) topological insulator occurs between 5 and 10 nm. These results demonstrate that HDPC serves as a sensitive diagnostic tool for topological phase transitions. The tunable electronic properties of $α$-Sn(110) films enable thickness- and strain-mediated control of topological states, establishing a versatile platform for exploring emerging topological phenomena and developing spin-based devices.