Active Dual-Gated Graphene Transistors for Low-Noise, Drift-Stable, and Tunable Chemical Sensing
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arXiv
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| Format: | Preprint |
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2025
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| _version_ | 1866918135761731584 |
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| author | Kammarchedu, Vinay Asgharian, Heshmat Chenani, Hossein Ebrahimi, Aida |
| author_facet | Kammarchedu, Vinay Asgharian, Heshmat Chenani, Hossein Ebrahimi, Aida |
| contents | Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional single-gate GFET sensors in liquid environments suffer from severe limitations, including signal drift, charge trapping, and insufficient signal amplification. Here, we introduce a dual-gate GFET architecture that integrates a high-k hafnium dioxide local back gate with an electrolyte top gate, coupled with real-time feedback biasing. This design enables capacitive signal amplification while simultaneously suppressing gate leakage and low-frequency noise. By systematically evaluating seven distinct operational modes, we identify the Dual Mode Fixed configuration as optimal, achieving up to 20x signal gain, > 15x lower drift compared with gate-swept methods, and up to 7x higher signal to noise ratio across a diverse range of analytes, including neurotransmitters, volatile organic compounds, environmental contaminants, and proteins. We further demonstrate robust, multiplexed detection using a PCB-integrated GFET sensor array, underscoring the scalability and practicality of the platform for portable, high-throughput sensing in complex environments. Together, these advances establish a versatile and stable sensing technology capable of real-time, label-free detection of molecular targets under ambient and physiological conditions, with broad applicability in health monitoring, food safety, agriculture, and environmental screening. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_04137 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Active Dual-Gated Graphene Transistors for Low-Noise, Drift-Stable, and Tunable Chemical Sensing Kammarchedu, Vinay Asgharian, Heshmat Chenani, Hossein Ebrahimi, Aida Applied Physics Mesoscale and Nanoscale Physics Systems and Control Graphene field-effect transistors (GFETs) are among the most promising platforms for ultrasensitive chemical and biological sensing due to their high carrier mobility, large surface area, and low intrinsic noise. However, conventional single-gate GFET sensors in liquid environments suffer from severe limitations, including signal drift, charge trapping, and insufficient signal amplification. Here, we introduce a dual-gate GFET architecture that integrates a high-k hafnium dioxide local back gate with an electrolyte top gate, coupled with real-time feedback biasing. This design enables capacitive signal amplification while simultaneously suppressing gate leakage and low-frequency noise. By systematically evaluating seven distinct operational modes, we identify the Dual Mode Fixed configuration as optimal, achieving up to 20x signal gain, > 15x lower drift compared with gate-swept methods, and up to 7x higher signal to noise ratio across a diverse range of analytes, including neurotransmitters, volatile organic compounds, environmental contaminants, and proteins. We further demonstrate robust, multiplexed detection using a PCB-integrated GFET sensor array, underscoring the scalability and practicality of the platform for portable, high-throughput sensing in complex environments. Together, these advances establish a versatile and stable sensing technology capable of real-time, label-free detection of molecular targets under ambient and physiological conditions, with broad applicability in health monitoring, food safety, agriculture, and environmental screening. |
| title | Active Dual-Gated Graphene Transistors for Low-Noise, Drift-Stable, and Tunable Chemical Sensing |
| topic | Applied Physics Mesoscale and Nanoscale Physics Systems and Control |
| url | https://arxiv.org/abs/2509.04137 |