Two-dimensional magnetic tunnel p-n junctions for low-power electronics
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arXiv
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| Autori principali: | , , , , , , , , , , , , , , , |
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| Natura: | Preprint |
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2025
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| _version_ | 1866918135794237440 |
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| author | Zhu, Wenkai Wang, Ziao Hu, Tiangui Kudrynskyi, Zakhar R. Zhou, Tong Kovalyuk, Zakhar D. Hu, Ce Lin, Hailong Li, Xiaodong Deng, Yongcheng Lv, Quanshan Zhao, Lixia Patane, Amalia Zutic, Igor Zheng, Houzhi Wang, Kaiyou |
| author_facet | Zhu, Wenkai Wang, Ziao Hu, Tiangui Kudrynskyi, Zakhar R. Zhou, Tong Kovalyuk, Zakhar D. Hu, Ce Lin, Hailong Li, Xiaodong Deng, Yongcheng Lv, Quanshan Zhao, Lixia Patane, Amalia Zutic, Igor Zheng, Houzhi Wang, Kaiyou |
| contents | For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the miniaturization of electronic components, enabling the development of more efficient electronics. Here, we report on a giant anomalous zero-bias spin voltage in magnetic tunnel junctions based on 2D materials. The generation, manipulation and detection of electron spin across a nanometer-thick magnetic tunnel junction do not require any applied bias. It is achieved by exploiting high-quality ferromagnetic/semiconductor interfaces and the asymmetric diffusion of spin-up/spin-down electrons across a semiconductor p-n junction. The large spin-voltage signal exceeds 30,000% and is far greater than the highest magnetoresistance signals reported to date. Our findings reveal unexplored opportunities to transform and amplify spin information for low-power electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_04206 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Two-dimensional magnetic tunnel p-n junctions for low-power electronics Zhu, Wenkai Wang, Ziao Hu, Tiangui Kudrynskyi, Zakhar R. Zhou, Tong Kovalyuk, Zakhar D. Hu, Ce Lin, Hailong Li, Xiaodong Deng, Yongcheng Lv, Quanshan Zhao, Lixia Patane, Amalia Zutic, Igor Zheng, Houzhi Wang, Kaiyou Mesoscale and Nanoscale Physics Other Condensed Matter For decades, semiconductors and their heterostructures have underpinned both fundamental and applied research across all areas of electronics. Two-dimensional, 2D (atomically thin) semiconductors have now the potential to push further the miniaturization of electronic components, enabling the development of more efficient electronics. Here, we report on a giant anomalous zero-bias spin voltage in magnetic tunnel junctions based on 2D materials. The generation, manipulation and detection of electron spin across a nanometer-thick magnetic tunnel junction do not require any applied bias. It is achieved by exploiting high-quality ferromagnetic/semiconductor interfaces and the asymmetric diffusion of spin-up/spin-down electrons across a semiconductor p-n junction. The large spin-voltage signal exceeds 30,000% and is far greater than the highest magnetoresistance signals reported to date. Our findings reveal unexplored opportunities to transform and amplify spin information for low-power electronics. |
| title | Two-dimensional magnetic tunnel p-n junctions for low-power electronics |
| topic | Mesoscale and Nanoscale Physics Other Condensed Matter |
| url | https://arxiv.org/abs/2509.04206 |