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Investigation of tantalum films growth for coplanar resonators with internal quality factors above ten million

Fuente: arXiv

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Autori principali:	Zikiy, E. V., Smirnov, N. S., Krivko, E. A., Matanin, A. R., Ivanov, A. I., Malevannaya, E. I., Polozov, V. I., Bukatin, S. V., Baklykov, D. A., Stepanov, I. A., Kotenkov, S. A., Bychkov, S. P., Ryzhikov, I. A., Andriyash, A. V., Rodionov, I. A.
Natura:	Preprint
Pubblicazione:	2025
Soggetti:	Quantum Physics Materials Science
Accesso online:	Acceder al recurso
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_version_	1866916935494533120
author	Zikiy, E. V. Smirnov, N. S. Krivko, E. A. Matanin, A. R. Ivanov, A. I. Malevannaya, E. I. Polozov, V. I. Bukatin, S. V. Baklykov, D. A. Stepanov, I. A. Kotenkov, S. A. Bychkov, S. P. Ryzhikov, I. A. Andriyash, A. V. Rodionov, I. A.
author_facet	Zikiy, E. V. Smirnov, N. S. Krivko, E. A. Matanin, A. R. Ivanov, A. I. Malevannaya, E. I. Polozov, V. I. Bukatin, S. V. Baklykov, D. A. Stepanov, I. A. Kotenkov, S. A. Bychkov, S. P. Ryzhikov, I. A. Andriyash, A. V. Rodionov, I. A.
contents	Alpha-tantalum on silicon is a promising platform for high-coherence superconducting quantum circuits. However, the growth mechanism of alpha-tantalum on silicon remains poorly understood. We present a comprehensive study on alpha-tantalum films growth on various substrate. The decisive role of a substrate material Debye temperature on phase selection mechanism in tantalum films growth is experimentally confirmed, contradicting the prior assumptions on substrate temperature influence. Crucially, we confirm that alpha-tantalum starts growing only after a 7-10 nm thick beta-tantalum underlayer. It results in ranging the critical temperature of α-Ta films from 3.77 K to 4.39 K for the total thickness from 20 to 150 nm, respectively. Finally, we compared high-quality Al and Ta coplanar resonators on silicon, demonstrating compact tantalum resonators (4/10.5/4 um) with an internal quality factor exceeding 10 million at single-photon excitation powers.
format	Preprint
id	arxiv_https___arxiv_org_abs_2509_04917
institution	arXiv
publishDate	2025
record_format	arxiv
spellingShingle	Investigation of tantalum films growth for coplanar resonators with internal quality factors above ten million Zikiy, E. V. Smirnov, N. S. Krivko, E. A. Matanin, A. R. Ivanov, A. I. Malevannaya, E. I. Polozov, V. I. Bukatin, S. V. Baklykov, D. A. Stepanov, I. A. Kotenkov, S. A. Bychkov, S. P. Ryzhikov, I. A. Andriyash, A. V. Rodionov, I. A. Quantum Physics Materials Science Alpha-tantalum on silicon is a promising platform for high-coherence superconducting quantum circuits. However, the growth mechanism of alpha-tantalum on silicon remains poorly understood. We present a comprehensive study on alpha-tantalum films growth on various substrate. The decisive role of a substrate material Debye temperature on phase selection mechanism in tantalum films growth is experimentally confirmed, contradicting the prior assumptions on substrate temperature influence. Crucially, we confirm that alpha-tantalum starts growing only after a 7-10 nm thick beta-tantalum underlayer. It results in ranging the critical temperature of α-Ta films from 3.77 K to 4.39 K for the total thickness from 20 to 150 nm, respectively. Finally, we compared high-quality Al and Ta coplanar resonators on silicon, demonstrating compact tantalum resonators (4/10.5/4 um) with an internal quality factor exceeding 10 million at single-photon excitation powers.
title	Investigation of tantalum films growth for coplanar resonators with internal quality factors above ten million
topic	Quantum Physics Materials Science
url	https://arxiv.org/abs/2509.04917