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Hauptverfasser: Tayyab, Muhammad, Azam, Sikander, Rafiq, Qaiser, Tirth, Vineet, Algahtani, Ali, Rahman, Amin Ur, Ahmad, Syed Sheraz, Khan, M. Tahir
Format: Preprint
Veröffentlicht: 2025
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Online-Zugang:https://arxiv.org/abs/2509.05278
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_version_ 1866915481752961024
author Tayyab, Muhammad
Azam, Sikander
Rafiq, Qaiser
Tirth, Vineet
Algahtani, Ali
Rahman, Amin Ur
Ahmad, Syed Sheraz
Khan, M. Tahir
author_facet Tayyab, Muhammad
Azam, Sikander
Rafiq, Qaiser
Tirth, Vineet
Algahtani, Ali
Rahman, Amin Ur
Ahmad, Syed Sheraz
Khan, M. Tahir
contents Tungstate-based oxides have attracted significant attention owing to their excellent structural stability, chemical robustness, and versatile optical properties, making them suitable for next-generation optoelectronic and phosphor applications. Among these, ZnWO$_4$ has emerged as a promising host matrix; however, the role of europium (Eu) substitution in modulating its optoelectronic behavior remains underexplored. In this work, we employ spin-polarized density functional theory (DFT) within the GGA+U framework to investigate the structural, electronic, and optical properties of pristine ZnWO$_4$ and Eu-doped ZnWO4 systems. Phonon dispersion analysis confirms dynamical stability for both pristine and doped structures. Eu doping reduces the bandgap, introduces new localized states near the Fermi level, and significantly alters the density of states, thereby enhancing electronic transitions. The optical response reveals a broadened dielectric function, red-shifted absorption edge, and intensified extinction coefficient, consistent with the presence of Eu 4f states. Additionally, reflectivity and energy-loss spectra indicate improved photon-phonon coupling and optical tunability upon doping. These findings highlight that Eu incorporation not only stabilizes the ZnWO$_4$ lattice but also tailors its optoelectronic features, positioning Eu-doped ZnWO4 as a potential candidate for white-light-emitting diodes (w-LEDs) and related optoelectronic technologies.
format Preprint
id arxiv_https___arxiv_org_abs_2509_05278
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Illuminating Stability and Spectral Shifts: A DFT+U Study of Eu-Doped ZnWO$_4$ for Visible-Light Optoelectronics
Tayyab, Muhammad
Azam, Sikander
Rafiq, Qaiser
Tirth, Vineet
Algahtani, Ali
Rahman, Amin Ur
Ahmad, Syed Sheraz
Khan, M. Tahir
Materials Science
Computational Physics
Tungstate-based oxides have attracted significant attention owing to their excellent structural stability, chemical robustness, and versatile optical properties, making them suitable for next-generation optoelectronic and phosphor applications. Among these, ZnWO$_4$ has emerged as a promising host matrix; however, the role of europium (Eu) substitution in modulating its optoelectronic behavior remains underexplored. In this work, we employ spin-polarized density functional theory (DFT) within the GGA+U framework to investigate the structural, electronic, and optical properties of pristine ZnWO$_4$ and Eu-doped ZnWO4 systems. Phonon dispersion analysis confirms dynamical stability for both pristine and doped structures. Eu doping reduces the bandgap, introduces new localized states near the Fermi level, and significantly alters the density of states, thereby enhancing electronic transitions. The optical response reveals a broadened dielectric function, red-shifted absorption edge, and intensified extinction coefficient, consistent with the presence of Eu 4f states. Additionally, reflectivity and energy-loss spectra indicate improved photon-phonon coupling and optical tunability upon doping. These findings highlight that Eu incorporation not only stabilizes the ZnWO$_4$ lattice but also tailors its optoelectronic features, positioning Eu-doped ZnWO4 as a potential candidate for white-light-emitting diodes (w-LEDs) and related optoelectronic technologies.
title Illuminating Stability and Spectral Shifts: A DFT+U Study of Eu-Doped ZnWO$_4$ for Visible-Light Optoelectronics
topic Materials Science
Computational Physics
url https://arxiv.org/abs/2509.05278