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Spin-transport characteristics in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET): Bias dependence of the spin polarization in Si and magnetoresistance in spin-valve signals

Fuente: arXiv

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Bibliographic Details
Main Authors:	Sato, Shoichi, Tanaka, Masaaki, Nakane, Ryosho
Format:	Preprint
Published:	2025
Subjects:	Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
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