Silicon-Compatible Ionic Control over Multi-State Magnetoelectric Phase Transformations in Correlated Oxide System

Fuente: arXiv
Saved in:
Bibliographic Details
Main Authors: Zhou, Xuanchi, Ji, Jiahui, Lu, Wentian, Ji, Huihui, Yao, Chunwei, Yao, Xiaohui, Qiao, Xiaomei, Zhou, Guowei, Xu, Xiaohong
Format: Preprint
Published: 2025
Subjects:
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!
_version_ 1866914027621318656
author Zhou, Xuanchi
Ji, Jiahui
Lu, Wentian
Ji, Huihui
Yao, Chunwei
Yao, Xiaohui
Qiao, Xiaomei
Zhou, Guowei
Xu, Xiaohong
author_facet Zhou, Xuanchi
Ji, Jiahui
Lu, Wentian
Ji, Huihui
Yao, Chunwei
Yao, Xiaohui
Qiao, Xiaomei
Zhou, Guowei
Xu, Xiaohong
contents Realizing room-temperature ferromagnetic insulators, critical enablers for low-power spintronics, is fundamentally challenged by the long-standing trade-off between ferromagnetic ordering and indirect exchange interactions in insulators. Ionic evolution offers tempting opportunities for accessing exotic magnetoelectric states and physical functionality beyond conventional doping paradigm via tailoring the charge-lattice-orbital-spin interactions. Here, we showcase the precise magneto-ionic control over magnetoelectric states in LSMO system, delicately delivering silicon-compatible weakly ferromagnetic insulator state above room temperature. Of particular note is the decoupling of ion-charge-spin interplay in correlated LSMO system, a primary obstacle in clarifying underlying physical origin, with this process concurrently giving rise to an emergent intermediate state characterized by a weakly ferromagnetic half-metallic state. Benefiting from the SrTiO3 buffer layer as epitaxial template to promote interfacial heterogeneous nucleation, hydrogenation enables diverse magnetoelectric states in LSMO integrated on silicon, fully compatible with traditional semiconductor processing. Assisted by theoretical calculations and spectroscopic techniques, hydrogen-induced magnetoelectric transitions in LSMO are driven by band-filling control and suppression in double exchange interaction. Our work not only defines a novel design paradigm for exploring exotic quantum states in correlated system, with transformative potential for spintronics, but also fundamentally unveils the physical origin behind ionic evolution via disentangling the ion-charge-spin coupling.
format Preprint
id arxiv_https___arxiv_org_abs_2509_06561
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Silicon-Compatible Ionic Control over Multi-State Magnetoelectric Phase Transformations in Correlated Oxide System
Zhou, Xuanchi
Ji, Jiahui
Lu, Wentian
Ji, Huihui
Yao, Chunwei
Yao, Xiaohui
Qiao, Xiaomei
Zhou, Guowei
Xu, Xiaohong
Materials Science
Strongly Correlated Electrons
Realizing room-temperature ferromagnetic insulators, critical enablers for low-power spintronics, is fundamentally challenged by the long-standing trade-off between ferromagnetic ordering and indirect exchange interactions in insulators. Ionic evolution offers tempting opportunities for accessing exotic magnetoelectric states and physical functionality beyond conventional doping paradigm via tailoring the charge-lattice-orbital-spin interactions. Here, we showcase the precise magneto-ionic control over magnetoelectric states in LSMO system, delicately delivering silicon-compatible weakly ferromagnetic insulator state above room temperature. Of particular note is the decoupling of ion-charge-spin interplay in correlated LSMO system, a primary obstacle in clarifying underlying physical origin, with this process concurrently giving rise to an emergent intermediate state characterized by a weakly ferromagnetic half-metallic state. Benefiting from the SrTiO3 buffer layer as epitaxial template to promote interfacial heterogeneous nucleation, hydrogenation enables diverse magnetoelectric states in LSMO integrated on silicon, fully compatible with traditional semiconductor processing. Assisted by theoretical calculations and spectroscopic techniques, hydrogen-induced magnetoelectric transitions in LSMO are driven by band-filling control and suppression in double exchange interaction. Our work not only defines a novel design paradigm for exploring exotic quantum states in correlated system, with transformative potential for spintronics, but also fundamentally unveils the physical origin behind ionic evolution via disentangling the ion-charge-spin coupling.
title Silicon-Compatible Ionic Control over Multi-State Magnetoelectric Phase Transformations in Correlated Oxide System
topic Materials Science
Strongly Correlated Electrons
url https://arxiv.org/abs/2509.06561