Sub-spin-flop switching of a fully compensated antiferromagnet by magnetic field
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arXiv
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| Main Authors: | , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| _version_ | 1866908972043206656 |
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| author | Zhou, Honglin Wang, Muyu Ma, Yinina Ma, Xiaoyan Li, Gang Tao, Zihao Zheng, Xiquan Yan, Liqin Peng, Yingying Shao, Ding-Fu Liu, Bo Li, Shiliang |
| author_facet | Zhou, Honglin Wang, Muyu Ma, Yinina Ma, Xiaoyan Li, Gang Tao, Zihao Zheng, Xiquan Yan, Liqin Peng, Yingying Shao, Ding-Fu Liu, Bo Li, Shiliang |
| contents | The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either uncompensated moments or high-field spin-flop transitions. Here, we demonstrate low-field switching in the fully compensated antiferromagnet CeNiAsO -- a material recently proposed as a candidate for $p$-wave magnetism. Using an in-plane magnetic field well below the spin-flop threshold, we selectively stabilize one of two degenerate antiferromagnetic domains with mutually orthogonal sublattice orientations. This field-induced domain selection allows reversible and nonvolatile switching of a giant in-plane resistivity anisotropy up to $\sim35\,\%$ -- a magnitude that far exceeds conventional anisotropy signals driven by spin-orbit coupling. The switching behavior persists across both the low-temperature noncollinear Néel phase and the higher-temperature collinear spin-density-wave phase, highlighting the universality of the domain-selection mechanism. Our work establishes a practical approach for manipulating compensated antiferromagnets with modest magnetic fields and underscores their potential for high-performance spintronic devices based on giant and switchable resistivity anisotropy. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_07351 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Sub-spin-flop switching of a fully compensated antiferromagnet by magnetic field Zhou, Honglin Wang, Muyu Ma, Yinina Ma, Xiaoyan Li, Gang Tao, Zihao Zheng, Xiquan Yan, Liqin Peng, Yingying Shao, Ding-Fu Liu, Bo Li, Shiliang Mesoscale and Nanoscale Physics Materials Science The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either uncompensated moments or high-field spin-flop transitions. Here, we demonstrate low-field switching in the fully compensated antiferromagnet CeNiAsO -- a material recently proposed as a candidate for $p$-wave magnetism. Using an in-plane magnetic field well below the spin-flop threshold, we selectively stabilize one of two degenerate antiferromagnetic domains with mutually orthogonal sublattice orientations. This field-induced domain selection allows reversible and nonvolatile switching of a giant in-plane resistivity anisotropy up to $\sim35\,\%$ -- a magnitude that far exceeds conventional anisotropy signals driven by spin-orbit coupling. The switching behavior persists across both the low-temperature noncollinear Néel phase and the higher-temperature collinear spin-density-wave phase, highlighting the universality of the domain-selection mechanism. Our work establishes a practical approach for manipulating compensated antiferromagnets with modest magnetic fields and underscores their potential for high-performance spintronic devices based on giant and switchable resistivity anisotropy. |
| title | Sub-spin-flop switching of a fully compensated antiferromagnet by magnetic field |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2509.07351 |