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| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2509.07440 |
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| _version_ | 1866911148957237248 |
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| author | Abdullaev, Azat Fernandez, Javier Garcia Nozais, Chloe O'Connell, Jacques Tlegenov, Rustem Sekerbayev, Kairolla Azarov, Alexander Leino, Aleksi Bouvier, Tomas Fernandez Zhao, Junlei Pena, Aldo Artimez Medvedev, Nikita Utegulov, Zhandos Prytz, Oystein Djurabekova, Flyura Kuznetsov, Andrej |
| author_facet | Abdullaev, Azat Fernandez, Javier Garcia Nozais, Chloe O'Connell, Jacques Tlegenov, Rustem Sekerbayev, Kairolla Azarov, Alexander Leino, Aleksi Bouvier, Tomas Fernandez Zhao, Junlei Pena, Aldo Artimez Medvedev, Nikita Utegulov, Zhandos Prytz, Oystein Djurabekova, Flyura Kuznetsov, Andrej |
| contents | The paths of swift heavy ions are typically traceable in solids, because of confined electronic interactions along the paths, inducing what is known in literature as 'ion tracks', i.e. nano-sized in cross-section cylindrical zones of modified material extending for microns in length. Such tracks readily form in materials exhibiting low thermal conductivities, in particular insulators or semiconductors, altering the homogeneity of materials. In this work, using recently discovered gamma/beta-Ga2O3 polymorph heterostructures we show that, in contrast to the trends in many other materials, including that in beta-Ga2O3, swift heavy ions leave no tracks in gamma-Ga2O3. We explained this trend in terms of amazingly fast disorder recovery, occurring because of multiple configurations in the gamma-Ga2O3 lattice itself, so that the disorder formed by ion impacts gets rapidly erased, giving a perception of ions leaving no tracks. As such, gamma-Ga2O3, readily integrated with beta-Ga2O3 in polymorph heterostructures, may become a promising semiconductor platform for devices capable to operate in extremely harsh radiation environments. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_07440 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Ions leaving no tracks Abdullaev, Azat Fernandez, Javier Garcia Nozais, Chloe O'Connell, Jacques Tlegenov, Rustem Sekerbayev, Kairolla Azarov, Alexander Leino, Aleksi Bouvier, Tomas Fernandez Zhao, Junlei Pena, Aldo Artimez Medvedev, Nikita Utegulov, Zhandos Prytz, Oystein Djurabekova, Flyura Kuznetsov, Andrej Materials Science The paths of swift heavy ions are typically traceable in solids, because of confined electronic interactions along the paths, inducing what is known in literature as 'ion tracks', i.e. nano-sized in cross-section cylindrical zones of modified material extending for microns in length. Such tracks readily form in materials exhibiting low thermal conductivities, in particular insulators or semiconductors, altering the homogeneity of materials. In this work, using recently discovered gamma/beta-Ga2O3 polymorph heterostructures we show that, in contrast to the trends in many other materials, including that in beta-Ga2O3, swift heavy ions leave no tracks in gamma-Ga2O3. We explained this trend in terms of amazingly fast disorder recovery, occurring because of multiple configurations in the gamma-Ga2O3 lattice itself, so that the disorder formed by ion impacts gets rapidly erased, giving a perception of ions leaving no tracks. As such, gamma-Ga2O3, readily integrated with beta-Ga2O3 in polymorph heterostructures, may become a promising semiconductor platform for devices capable to operate in extremely harsh radiation environments. |
| title | Ions leaving no tracks |
| topic | Materials Science |
| url | https://arxiv.org/abs/2509.07440 |