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Main Authors: Li, Zhe, Cao, Haijun, Meng, Sheng
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2509.08068
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_version_ 1866914032476225536
author Li, Zhe
Cao, Haijun
Meng, Sheng
author_facet Li, Zhe
Cao, Haijun
Meng, Sheng
contents The $Γ$-point topology represents a significant segment in the family of topological insulators. Here we provide a comprehensive prediction of light-induced $Γ$-point-based topological manipulation in trigonal bismuthene and its derivatives. Our findings unveil a two-stage process of topological phase transitions (TPT) as the laser intensity increases. Initially, a quantum-spin-Hall or metallic state transitions to a quantum-anomalous-Hall (QAH) state ($C$ = $\pm$3), followed by another TPT that yields a compensated Chern-insulating state ($C$ = 0). The trigonal warping model accounts for these states, describing the $C_{3z}$-rotational band-inversion process, which is determined by $\pm$1 orders of replica bands. Notably, this high Chern-number QAH state persists over a broad range of laser parameters, maintaining functionality beyond room temperature as evidenced by the large global gaps ($\geq$ 60 meV). Our work provides a comprehensive roadmap towards the designer $Γ$-point topology under laser excitation, facilitating applications of artificial topological materials.
format Preprint
id arxiv_https___arxiv_org_abs_2509_08068
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Laser-engineered $Γ$-point Topology in Trigonal Bismuthene
Li, Zhe
Cao, Haijun
Meng, Sheng
Mesoscale and Nanoscale Physics
Materials Science
The $Γ$-point topology represents a significant segment in the family of topological insulators. Here we provide a comprehensive prediction of light-induced $Γ$-point-based topological manipulation in trigonal bismuthene and its derivatives. Our findings unveil a two-stage process of topological phase transitions (TPT) as the laser intensity increases. Initially, a quantum-spin-Hall or metallic state transitions to a quantum-anomalous-Hall (QAH) state ($C$ = $\pm$3), followed by another TPT that yields a compensated Chern-insulating state ($C$ = 0). The trigonal warping model accounts for these states, describing the $C_{3z}$-rotational band-inversion process, which is determined by $\pm$1 orders of replica bands. Notably, this high Chern-number QAH state persists over a broad range of laser parameters, maintaining functionality beyond room temperature as evidenced by the large global gaps ($\geq$ 60 meV). Our work provides a comprehensive roadmap towards the designer $Γ$-point topology under laser excitation, facilitating applications of artificial topological materials.
title Laser-engineered $Γ$-point Topology in Trigonal Bismuthene
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2509.08068