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| Main Authors: | , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2509.09068 |
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| _version_ | 1866909781392883712 |
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| author | Volpato, Maria Carolina Magro, Gustavo H. Von Zuben, Antonio A. G. Barea, Luis A. M. de Assis, Pierre-Louis Frateschi, Newton C. |
| author_facet | Volpato, Maria Carolina Magro, Gustavo H. Von Zuben, Antonio A. G. Barea, Luis A. M. de Assis, Pierre-Louis Frateschi, Newton C. |
| contents | Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of two-dimensional (2D) materials has emerged as a promising strategy to overcome these limitations by enabling strong light--matter interaction and broadband absorption. Here, we demonstrate saturable absorption in a Complementary Metal-Oxide-Semiconductor (CMOS)-compatible silicon-on-insulator (SOI) microring resonator integrated with an exfoliated monolayer of 1T'-MoTe2. Transmission measurements under varying input powers reveal a clear nonlinear absorption response, with a saturation power as low as 2(1)uW. A phenomenological model accurately reproduces the experimental results, confirming the nonlinear behavior induced by the hybrid MoTe2 integration. These findings establish a proof-of-concept for ultracompact, low-power saturable absorbers in photonic integrated circuits (PICs), paving the way for applications in integrated lasers, ultrafast optical signal processing, and neuromorphic photonics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_09068 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Hybrid integration of two-dimensional dichalcogenides for low power saturable absorption in photonic integrated circuits Volpato, Maria Carolina Magro, Gustavo H. Von Zuben, Antonio A. G. Barea, Luis A. M. de Assis, Pierre-Louis Frateschi, Newton C. Optics Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of two-dimensional (2D) materials has emerged as a promising strategy to overcome these limitations by enabling strong light--matter interaction and broadband absorption. Here, we demonstrate saturable absorption in a Complementary Metal-Oxide-Semiconductor (CMOS)-compatible silicon-on-insulator (SOI) microring resonator integrated with an exfoliated monolayer of 1T'-MoTe2. Transmission measurements under varying input powers reveal a clear nonlinear absorption response, with a saturation power as low as 2(1)uW. A phenomenological model accurately reproduces the experimental results, confirming the nonlinear behavior induced by the hybrid MoTe2 integration. These findings establish a proof-of-concept for ultracompact, low-power saturable absorbers in photonic integrated circuits (PICs), paving the way for applications in integrated lasers, ultrafast optical signal processing, and neuromorphic photonics. |
| title | Hybrid integration of two-dimensional dichalcogenides for low power saturable absorption in photonic integrated circuits |
| topic | Optics |
| url | https://arxiv.org/abs/2509.09068 |