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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2509.09233 |
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| _version_ | 1866908532157186048 |
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| author | Ghosh, Jishnu Parate, Shubham Basak, Arup De, Binoy Krishna Mukhopadhyay, Krishnendu Agarwal, Abhinav Gupta, Gopesh Kumar Nath, Digbijoy Nukala, Pavan |
| author_facet | Ghosh, Jishnu Parate, Shubham Basak, Arup De, Binoy Krishna Mukhopadhyay, Krishnendu Agarwal, Abhinav Gupta, Gopesh Kumar Nath, Digbijoy Nukala, Pavan |
| contents | Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlayer sliding, and structural polymorphism. Ferroelectric semiconductor field-effect transistors (FeS-FETs) provide an ideal architecture to harness this coupling. Here, we demonstrate gate-tunable negative differential resistance (NDR) with high peak-to-valley ratios and hysteretic output conductance in In2Se3 FeS-FETs. Combining high-resolution electron microscopy with electrical transport measurements, we attribute the NDR to a field-induced, volatile phase transition from a low-resistance alpha-2H phase to a high-resistance state. Atomic scale ex-situ imaging reveals that in-plane electric fields (Vd) drive interlayer sliding, rotational misalignments that generate Moire patterns, and intralayer shear-together producing stress induced phase transitions. Out-of-plane field however results in robust non-volatile polarization switching. These mechanistic insights highlight both the promise of two dimensional ferroelectric devices for multifunctional nanoelectronics and alternative computing paradigms, and the intrinsic limitations of In2Se3 field-effect transistors for conventional ferroelectric memory applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_09233 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs Ghosh, Jishnu Parate, Shubham Basak, Arup De, Binoy Krishna Mukhopadhyay, Krishnendu Agarwal, Abhinav Gupta, Gopesh Kumar Nath, Digbijoy Nukala, Pavan Materials Science Indium selenide (In2Se3), a ferroelectric semiconductor, offers a unique platform for multifunctional nanoelectronics owing to the interplay between polarization dynamics, interlayer sliding, and structural polymorphism. Ferroelectric semiconductor field-effect transistors (FeS-FETs) provide an ideal architecture to harness this coupling. Here, we demonstrate gate-tunable negative differential resistance (NDR) with high peak-to-valley ratios and hysteretic output conductance in In2Se3 FeS-FETs. Combining high-resolution electron microscopy with electrical transport measurements, we attribute the NDR to a field-induced, volatile phase transition from a low-resistance alpha-2H phase to a high-resistance state. Atomic scale ex-situ imaging reveals that in-plane electric fields (Vd) drive interlayer sliding, rotational misalignments that generate Moire patterns, and intralayer shear-together producing stress induced phase transitions. Out-of-plane field however results in robust non-volatile polarization switching. These mechanistic insights highlight both the promise of two dimensional ferroelectric devices for multifunctional nanoelectronics and alternative computing paradigms, and the intrinsic limitations of In2Se3 field-effect transistors for conventional ferroelectric memory applications. |
| title | Field-induced reversible phase transition and negative differential resistance in In2Se3 ferroelectric semiconducting FETs |
| topic | Materials Science |
| url | https://arxiv.org/abs/2509.09233 |