Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides
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| Autores principales: | , , , , , , , , , , , , , , , |
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| Formato: | Preprint |
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2025
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| author | Peña, Tara Persson, Anton E. O. Krayev, Andrey Friðriksdóttir, Áshildur Su, Haotian Lee, Yuan-Mau Song, Young Suh Neilson, Kathryn Zhang, Zhepeng Hoang, Anh Tuan Yang, Jerry A. Hoang, Lauren Wang, Shan X. Mannix, Andrew J. McIntyre, Paul C. Pop, Eric |
| author_facet | Peña, Tara Persson, Anton E. O. Krayev, Andrey Friðriksdóttir, Áshildur Su, Haotian Lee, Yuan-Mau Song, Young Suh Neilson, Kathryn Zhang, Zhepeng Hoang, Anh Tuan Yang, Jerry A. Hoang, Lauren Wang, Shan X. Mannix, Andrew J. McIntyre, Paul C. Pop, Eric |
| contents | Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved only in micrometer-wide channels. Here, we demonstrate both $\it{n}$- and $\it{p}$-type nanoribbon transistors based on monolayer 2DS, fabricated using a multi-patterning process, reaching channel widths and lengths down to 25-30 nm. 'Anchored' contacts improve device yield, while nanoscale imaging, including tip-enhanced photoluminescence, reveals minimal edge degradation. The devices reach on-state currents up to 560, 420, and 130 $μ$A $μ$m$^{-1}$ at 1 V drain-to-source voltage for $\it{n}$-type MoS$_{2}$, WS$_{2}$, and $\it{p}$-type WSe$_{2}$, respectively, integrated with thin high-$κ$ dielectrics. These results surpass prior reports for single-gated nanoribbons, the WS$_{2}$ by over 100 times, even in normally-off (enhancement-mode) transistors. Taken together, these findings suggest that top down patterned 2DS nanoribbons are promising building blocks for future nanosheet transistors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_09964 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides Peña, Tara Persson, Anton E. O. Krayev, Andrey Friðriksdóttir, Áshildur Su, Haotian Lee, Yuan-Mau Song, Young Suh Neilson, Kathryn Zhang, Zhepeng Hoang, Anh Tuan Yang, Jerry A. Hoang, Lauren Wang, Shan X. Mannix, Andrew J. McIntyre, Paul C. Pop, Eric Materials Science Mesoscale and Nanoscale Physics Nanoscale transistors require aggressive reduction of all channel dimensions: length, width, and thickness. While monolayer two-dimensional semiconductors (2DS) offer ultimate thickness scaling, good performance has largely been achieved only in micrometer-wide channels. Here, we demonstrate both $\it{n}$- and $\it{p}$-type nanoribbon transistors based on monolayer 2DS, fabricated using a multi-patterning process, reaching channel widths and lengths down to 25-30 nm. 'Anchored' contacts improve device yield, while nanoscale imaging, including tip-enhanced photoluminescence, reveals minimal edge degradation. The devices reach on-state currents up to 560, 420, and 130 $μ$A $μ$m$^{-1}$ at 1 V drain-to-source voltage for $\it{n}$-type MoS$_{2}$, WS$_{2}$, and $\it{p}$-type WSe$_{2}$, respectively, integrated with thin high-$κ$ dielectrics. These results surpass prior reports for single-gated nanoribbons, the WS$_{2}$ by over 100 times, even in normally-off (enhancement-mode) transistors. Taken together, these findings suggest that top down patterned 2DS nanoribbons are promising building blocks for future nanosheet transistors. |
| title | Scaling High-Performance Nanoribbon Transistors with Monolayer Transition Metal Dichalcogenides |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2509.09964 |