Achieving fully-compensated ferrimagnetism through two-dimensional heterojunctions
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arXiv
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| Format: | Preprint |
| Publié: |
2025
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| _version_ | 1866908537780699136 |
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| author | Guo, San-Dong He, Junjie Ang, Yee Sin |
| author_facet | Guo, San-Dong He, Junjie Ang, Yee Sin |
| contents | In addition to altermagnets, fully-compensated ferrimagnets are another category of collinear magnetic materials that possess zero-net total magnetic moment and exhibit spin-splitting, making them promising for low-energy spintronics, high-density data storage and high-sensitivity sensors. Although many methods, such as alloying, external electric field, Janus engineering, ferroelectric field and spin ordering, have been proposed to achieve fully-compensated ferrimagnetism, these approaches either face experimental difficulties or produce a small spin-splitting or are volatile. Here, we propose to form vertical heterostructures by stacking two different but equally magnetized two-dimensional ferromagnetic materials. If an A-type antiferromagnetic ordering is satisfied, a fully compensated ferrimagnet can be formed. This vertical heterostructure approach is insensitive to lattice matching and stacking manner, thus being more conducive to experimental realization. Through first-principles calculations, we verify our proposal with several examples, focusing in particular on $\mathrm{CrI_3}$/$\mathrm{CrGeTe_3}$ heterojunction composed of experimentally synthesized $\mathrm{CrI_3}$ and $\mathrm{CrGeTe_3}$ monolayers. The calculations show that $\mathrm{CrI_3}$/$\mathrm{CrGeTe_3}$ is a fully-compensated ferrimagnet, with pronounced spin-splitting, and that tensile strain is more favorable for achieving fully-compensated ferrimagnetism. Our work provides an experimentally feasible strategy for realizing fully-compensated ferrimagnetism, thereby further advancing the development of this field. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_10768 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Achieving fully-compensated ferrimagnetism through two-dimensional heterojunctions Guo, San-Dong He, Junjie Ang, Yee Sin Materials Science In addition to altermagnets, fully-compensated ferrimagnets are another category of collinear magnetic materials that possess zero-net total magnetic moment and exhibit spin-splitting, making them promising for low-energy spintronics, high-density data storage and high-sensitivity sensors. Although many methods, such as alloying, external electric field, Janus engineering, ferroelectric field and spin ordering, have been proposed to achieve fully-compensated ferrimagnetism, these approaches either face experimental difficulties or produce a small spin-splitting or are volatile. Here, we propose to form vertical heterostructures by stacking two different but equally magnetized two-dimensional ferromagnetic materials. If an A-type antiferromagnetic ordering is satisfied, a fully compensated ferrimagnet can be formed. This vertical heterostructure approach is insensitive to lattice matching and stacking manner, thus being more conducive to experimental realization. Through first-principles calculations, we verify our proposal with several examples, focusing in particular on $\mathrm{CrI_3}$/$\mathrm{CrGeTe_3}$ heterojunction composed of experimentally synthesized $\mathrm{CrI_3}$ and $\mathrm{CrGeTe_3}$ monolayers. The calculations show that $\mathrm{CrI_3}$/$\mathrm{CrGeTe_3}$ is a fully-compensated ferrimagnet, with pronounced spin-splitting, and that tensile strain is more favorable for achieving fully-compensated ferrimagnetism. Our work provides an experimentally feasible strategy for realizing fully-compensated ferrimagnetism, thereby further advancing the development of this field. |
| title | Achieving fully-compensated ferrimagnetism through two-dimensional heterojunctions |
| topic | Materials Science |
| url | https://arxiv.org/abs/2509.10768 |