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Bibliographic Details
Main Authors: Hoglund, Eric R., Walker, Harrison A., Meisenheimer, Peter, Pfeifer, Thomas W., De Vries, Niels, Chaudhuri, Dipanjan, Liu, Ting-Ran, Nelson-Quillin, Amber M., Susarla, Sandhya, Bao, De-Liang, Hopkins, Patrick E., Lupini, Andrew R., Abbamonte, Peter, Ramesh, Yu-Tsun Shao Ramamoorthy, Pantelides, Sokrates T., Hachtel, Jordan A.
Format: Preprint
Published: 2025
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Online Access:https://arxiv.org/abs/2509.10783
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Table of Contents:
  • The ordering of magnetic or electric dipoles leading to real-space topological structures is at the forefront of materials research as their quantum mechanical nature often lends itself to emergent properties. Atomic lattice vibrations (phonons) are often a key contributor to the formation of long-range dipole textures based on ferroelectrics and impact the properties of the emergent phases. Here, using monochromated, momentum-resolved electron energy-loss spectroscopy (qEELS) with nanometer spatial resolution and meV-spectral-precision, we demonstrate that polar vortex lattices in PbTiO$_3$ spatially modulate the material's vibrational spectrum in patterns that directly reflect the overlying symmetry of the topological patterns. Moreover, by combining experiments with molecular dynamics simulations using machine learned potentials we reveal how these structures modify phonon modes across the vibrational spectrum. Beyond simple intensity modulation, we find that the chirality of the vortex topology imparts its unique symmetry onto phonons, producing a distinctive asymmetrical spectral shift across the vortex unit cell. Finally, the high spatial resolution of the technique enables topological defects to be probed directly, demonstrating a return to trivial PbTiO$_3$ modes at vortex dislocation cores. These findings establish a fundamental relationship between ferroelectric-ordering-induced topologies and phonon behavior, opening new avenues for engineering thermal transport, electron-phonon coupling, and other phonon-mediated properties in next-generation nanoscale devices.