Integration of $\text{Er}^{3+}$-emitters in silicon-on-insulator nanodisks metasurface
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arXiv
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| Auteurs principaux: | , , , , |
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| Format: | Preprint |
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2025
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| _version_ | 1866912680323842048 |
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| author | Bader, Joshua Arianfard, Hamed Ciavolino, Vincenzo Sato, Shin-ichiro Castelletto, Stefania |
| author_facet | Bader, Joshua Arianfard, Hamed Ciavolino, Vincenzo Sato, Shin-ichiro Castelletto, Stefania |
| contents | Erbium ($\text{Er}^{3+}$) emitters are relevant for optical applications due to their narrow emission line directly in the telecom C-band due to the ${}^\text{4}\text{I}_{\text{13/2}}$ $\rightarrow$ ${}^\text{4}\text{I}_{\text{15/2}}$ transition at 1.54 $μ$m. Additionally they are promising candidates for future quantum technologies when embedded in thin-film silicon-on-insulator (SOI) to achieve fabrication scalability and CMOS compatibility. In this paper we integrate $\text{Er}^{3+}$ emitters in SOI metasurfaces made of closely spaced array of nanodisks, to study their spontaneous emission via room and cryogenic temperature confocal microscopy, off-resonance and in-resonance photoluminescence excitation at room temperature and time resolved spectroscopy. This work demonstrates the possibility to adopt CMOS-compatible and fabrication scalable metasurfaces for controlling and improving the collection efficiency of the spontaneous emission from the $\text{Er}^{3+}$ transition in SOI and could be adopted in similar technologically advanced materials. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_11592 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Integration of $\text{Er}^{3+}$-emitters in silicon-on-insulator nanodisks metasurface Bader, Joshua Arianfard, Hamed Ciavolino, Vincenzo Sato, Shin-ichiro Castelletto, Stefania Optics Materials Science Erbium ($\text{Er}^{3+}$) emitters are relevant for optical applications due to their narrow emission line directly in the telecom C-band due to the ${}^\text{4}\text{I}_{\text{13/2}}$ $\rightarrow$ ${}^\text{4}\text{I}_{\text{15/2}}$ transition at 1.54 $μ$m. Additionally they are promising candidates for future quantum technologies when embedded in thin-film silicon-on-insulator (SOI) to achieve fabrication scalability and CMOS compatibility. In this paper we integrate $\text{Er}^{3+}$ emitters in SOI metasurfaces made of closely spaced array of nanodisks, to study their spontaneous emission via room and cryogenic temperature confocal microscopy, off-resonance and in-resonance photoluminescence excitation at room temperature and time resolved spectroscopy. This work demonstrates the possibility to adopt CMOS-compatible and fabrication scalable metasurfaces for controlling and improving the collection efficiency of the spontaneous emission from the $\text{Er}^{3+}$ transition in SOI and could be adopted in similar technologically advanced materials. |
| title | Integration of $\text{Er}^{3+}$-emitters in silicon-on-insulator nanodisks metasurface |
| topic | Optics Materials Science |
| url | https://arxiv.org/abs/2509.11592 |