Extraction of Electron and Hole Drift Velocities in thin 4H-SiC PIN Detectors using High-Frequency Readout Electronics

Ähnliche Einträge

• In-situ Radiation Damage Study of Silicon Carbide Detectors Subjected to Clinical Proton Beams
  von: Radmanovac, Daniel, et al.
  Veröffentlicht: (2025)
• Characterizing the Delivered Spill Structure of Medical Proton and Carbon-Ion Beams at MedAustron using a High Frequency Silicon Carbide Readout
  von: Knopf, Matthias, et al.
  Veröffentlicht: (2025)
• Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode
  von: Gsponer, Andreas, et al.
  Veröffentlicht: (2023)
• Observation of Charge Enhancement in forward-biased neutron-irradiated 4H-SiC PiN Detectors in UV-TCT Measurements
  von: Gsponer, Andreas, et al.
  Veröffentlicht: (2024)
• Design and simulation of a 4H-SiC low gain avalanche diode with trench-isolation
  von: Onder, Sebastian, et al.
  Veröffentlicht: (2025)