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| Main Authors: | , , , , |
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| Format: | Preprint |
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2025
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| Online Access: | https://arxiv.org/abs/2509.12548 |
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| _version_ | 1866909790269079552 |
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| author | Yin, Ershuai Luo, Wenzhu Wang, Lei Sun, Enjian Li, Qiang |
| author_facet | Yin, Ershuai Luo, Wenzhu Wang, Lei Sun, Enjian Li, Qiang |
| contents | Heat generated in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) is often concentrated in nanoscale regions and must dissipate through multiple heterostructures. However, the influence of non-uniform heat sources on the thermal transport of such heterostructures remains unclear. In this work, a thermal transport model for heterostructures under the non-uniform heat source is developed by combining first-principles calculations with Monte Carlo simulations. Temperature, heat flux, and spectral thermal conductance distributions are compared between uniform and non-uniform heat sources. The effects of heterostructure height, heat source width, and heat source height on thermal transfer characteristics are analyzed for four typical heterostructures: GaN/AlN, GaN/Diamond, GaN/Si, and GaN/SiC. The results reveal that non-uniform heat sources have little effect on average interfacial thermal conductance but induce pronounced local non-uniformity when the heterostructure height is small. The interfacial thermal conductance near the heat source region is significantly higher than that in other areas. As the heat source non-uniformity increases, the total thermal resistance of the heterostructure rises markedly, reaching several times that under uniform heat sources. Finite-element calculations fail to capture the combined effects of non-uniform heating and microscale dimensions, leading to a severe underestimation of heterostructure total thermal resistance. This work reveals the thermal transport mechanisms of heterostructures under non-uniform heat sources and provides theoretical guidance for the thermal design of wide-bandgap semiconductor devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_12548 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Thermal Transport of GaN/Substrate Heterostructures under Non-Uniform Heat Source Yin, Ershuai Luo, Wenzhu Wang, Lei Sun, Enjian Li, Qiang Applied Physics J.2.7 Heat generated in gallium nitride (GaN) high-electron-mobility transistors (HEMTs) is often concentrated in nanoscale regions and must dissipate through multiple heterostructures. However, the influence of non-uniform heat sources on the thermal transport of such heterostructures remains unclear. In this work, a thermal transport model for heterostructures under the non-uniform heat source is developed by combining first-principles calculations with Monte Carlo simulations. Temperature, heat flux, and spectral thermal conductance distributions are compared between uniform and non-uniform heat sources. The effects of heterostructure height, heat source width, and heat source height on thermal transfer characteristics are analyzed for four typical heterostructures: GaN/AlN, GaN/Diamond, GaN/Si, and GaN/SiC. The results reveal that non-uniform heat sources have little effect on average interfacial thermal conductance but induce pronounced local non-uniformity when the heterostructure height is small. The interfacial thermal conductance near the heat source region is significantly higher than that in other areas. As the heat source non-uniformity increases, the total thermal resistance of the heterostructure rises markedly, reaching several times that under uniform heat sources. Finite-element calculations fail to capture the combined effects of non-uniform heating and microscale dimensions, leading to a severe underestimation of heterostructure total thermal resistance. This work reveals the thermal transport mechanisms of heterostructures under non-uniform heat sources and provides theoretical guidance for the thermal design of wide-bandgap semiconductor devices. |
| title | Thermal Transport of GaN/Substrate Heterostructures under Non-Uniform Heat Source |
| topic | Applied Physics J.2.7 |
| url | https://arxiv.org/abs/2509.12548 |