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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
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2025
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2509.12559 |
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| _version_ | 1866915496044003328 |
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| author | Okamura, Hidekazu Okazaki, Haruna Marugaku, Katsunori Lee, Subin Yoneda, Tomoki Udono, Haruhiko Mori, Yoshihisa Maesato, Mitsuhiko Kitagawa, Hiroshi Ikemoto, Yuka Moriwaki, Taro |
| author_facet | Okamura, Hidekazu Okazaki, Haruna Marugaku, Katsunori Lee, Subin Yoneda, Tomoki Udono, Haruhiko Mori, Yoshihisa Maesato, Mitsuhiko Kitagawa, Hiroshi Ikemoto, Yuka Moriwaki, Taro |
| contents | In this article, a brief introduction is first given on infrared studies of materials at high pressures using a diamond anvil cell. Then, our recent results of high-pressure infrared studies are described for Mg$_2$Si, InAs, and InSb. For Mg$_2$Si, pressure-induced metallization at pressures near 10 GPa were clearly demonstrated for both carrier-doped and undoped Mg$_2$Si by large increases of reflectivity. For InAs and InSb, their band gap ($E_g$) increased rapidly and almost linearly with pressure with linear coefficients of $dE_g/dP$=84.6 and 112 meV/GPa, respectively. Obtained values of $E_g$ versus lattice parameter at high pressures are compared with those for other IIl-V semiconductors at ambient pressure, giving unique insight into effects of physical and chemical pressures on $E_g$. Above the structural transition pressures of 7 and 3 GPa for InAs and InSb, respectively, they exhibit highly metallic characteristics accompanied by high reflectivity. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_12559 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | High-pressure electronic states in semiconductors studied by infrared spectroscopy: metallization and band gap tuning in Mg$_2$Si, InAs and InSb Okamura, Hidekazu Okazaki, Haruna Marugaku, Katsunori Lee, Subin Yoneda, Tomoki Udono, Haruhiko Mori, Yoshihisa Maesato, Mitsuhiko Kitagawa, Hiroshi Ikemoto, Yuka Moriwaki, Taro Materials Science In this article, a brief introduction is first given on infrared studies of materials at high pressures using a diamond anvil cell. Then, our recent results of high-pressure infrared studies are described for Mg$_2$Si, InAs, and InSb. For Mg$_2$Si, pressure-induced metallization at pressures near 10 GPa were clearly demonstrated for both carrier-doped and undoped Mg$_2$Si by large increases of reflectivity. For InAs and InSb, their band gap ($E_g$) increased rapidly and almost linearly with pressure with linear coefficients of $dE_g/dP$=84.6 and 112 meV/GPa, respectively. Obtained values of $E_g$ versus lattice parameter at high pressures are compared with those for other IIl-V semiconductors at ambient pressure, giving unique insight into effects of physical and chemical pressures on $E_g$. Above the structural transition pressures of 7 and 3 GPa for InAs and InSb, respectively, they exhibit highly metallic characteristics accompanied by high reflectivity. |
| title | High-pressure electronic states in semiconductors studied by infrared spectroscopy: metallization and band gap tuning in Mg$_2$Si, InAs and InSb |
| topic | Materials Science |
| url | https://arxiv.org/abs/2509.12559 |