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Over One Order of Magnitude Enhancement in Hole Mobility of 2D III-V Semiconductors through Valence Band Edge Shift

Fuente: arXiv

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Bibliographic Details
Main Authors:	Sun, Jianshi, Li, Shouhang, Shao, Cheng, Tong, Zhen, An, Meng, Hu, Yue, Zhu, Xiongfei, Frauenheim, Thomas, Liu, Xiangjun
Format:	Preprint
Published:	2025
Subjects:	Materials Science
Online Access:	Acceder al recurso
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