Effective conduction-band model for zincblende III-V semiconductors in the presence of strain: tuning the properties of bulk crystals and nanostructures
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arXiv
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| Natura: | Preprint |
| Pubblicazione: |
2025
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| author | Escribano, Samuel D. Yeyati, Alfredo Levy Prada, Elsa |
| author_facet | Escribano, Samuel D. Yeyati, Alfredo Levy Prada, Elsa |
| contents | Strain provides a powerful knob to tailor the electronic properties of semiconductors. Simple yet accurate approximations that capture strain effects in demanding simulations of mesoscopic nanostructures are therefore highly desirable. However, for III-V compounds, key materials for quantum applications, such approaches remain comparatively underdeveloped. In this work, we derive a compact, effective Hamiltonian that describes the conduction band of zincblende III-V semiconductors incorporating strain effects. Starting from the eight-band k$\cdot$p model with Bir-Pikus corrections, we perform a folding-down procedure to obtain analytical expressions for conduction-band strain-renormalized parameters, including the effective mass, chemical potential, spin-orbit coupling, and $g$-factor. The model reproduces full multiband results under small to moderate strain, while retaining a form suitable for device-scale calculations. We benchmark the model for bulk deformations and apply it to representative nanostructures, such as core.shell nanowires and planar heterostructures. Our results provide a practical and versatile tool for incorporating strain into the design of III-V semiconductor devices, enabling reliable predictions of their properties with direct implications for spintronic, straintronic, optoelectronic, and topological quantum technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2509_13246 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Effective conduction-band model for zincblende III-V semiconductors in the presence of strain: tuning the properties of bulk crystals and nanostructures Escribano, Samuel D. Yeyati, Alfredo Levy Prada, Elsa Materials Science Mesoscale and Nanoscale Physics Strain provides a powerful knob to tailor the electronic properties of semiconductors. Simple yet accurate approximations that capture strain effects in demanding simulations of mesoscopic nanostructures are therefore highly desirable. However, for III-V compounds, key materials for quantum applications, such approaches remain comparatively underdeveloped. In this work, we derive a compact, effective Hamiltonian that describes the conduction band of zincblende III-V semiconductors incorporating strain effects. Starting from the eight-band k$\cdot$p model with Bir-Pikus corrections, we perform a folding-down procedure to obtain analytical expressions for conduction-band strain-renormalized parameters, including the effective mass, chemical potential, spin-orbit coupling, and $g$-factor. The model reproduces full multiband results under small to moderate strain, while retaining a form suitable for device-scale calculations. We benchmark the model for bulk deformations and apply it to representative nanostructures, such as core.shell nanowires and planar heterostructures. Our results provide a practical and versatile tool for incorporating strain into the design of III-V semiconductor devices, enabling reliable predictions of their properties with direct implications for spintronic, straintronic, optoelectronic, and topological quantum technologies. |
| title | Effective conduction-band model for zincblende III-V semiconductors in the presence of strain: tuning the properties of bulk crystals and nanostructures |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2509.13246 |