Stochastic ion emission perturbation mechanisms in atom probe tomography: Linking simulations to experiment

Fuente: arXiv
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Auteurs principaux: Shaikh, Aslam, Mäkinen, Tero, Vurpillot, François, Alava, Mikko, Lomakin, Ivan
Format: Preprint
Publié: 2025
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author Shaikh, Aslam
Mäkinen, Tero
Vurpillot, François
Alava, Mikko
Lomakin, Ivan
author_facet Shaikh, Aslam
Mäkinen, Tero
Vurpillot, François
Alava, Mikko
Lomakin, Ivan
contents Field evaporation in atom probe tomography (APT) includes known processes related to surface migration of atoms, such as the so-called roll-up mechanism. They lead to trajectory aberrations and artefacts on the detector. These processes are usually neglected in simulations. The inclusion of such processes is crucial for providing reliable models for the development and verification of APT reconstruction algorithms, a key part of the whole methodology. Here we include stochastic lateral velocity perturbations and a roll-up mechanism to simulations performed using the Robin--Rolland model. By comparing with experimental data from Al and Ni systems, we find the stochastic perturbation energy distributions that allow us to very accurately reproduce the detector patterns seen experimentally and thus greatly improve the accuracy of the simulations. We also explore the possible causes of remaining discrepancies between the experimental and simulated detector patterns.
format Preprint
id arxiv_https___arxiv_org_abs_2509_13744
institution arXiv
publishDate 2025
record_format arxiv
spellingShingle Stochastic ion emission perturbation mechanisms in atom probe tomography: Linking simulations to experiment
Shaikh, Aslam
Mäkinen, Tero
Vurpillot, François
Alava, Mikko
Lomakin, Ivan
Materials Science
Field evaporation in atom probe tomography (APT) includes known processes related to surface migration of atoms, such as the so-called roll-up mechanism. They lead to trajectory aberrations and artefacts on the detector. These processes are usually neglected in simulations. The inclusion of such processes is crucial for providing reliable models for the development and verification of APT reconstruction algorithms, a key part of the whole methodology. Here we include stochastic lateral velocity perturbations and a roll-up mechanism to simulations performed using the Robin--Rolland model. By comparing with experimental data from Al and Ni systems, we find the stochastic perturbation energy distributions that allow us to very accurately reproduce the detector patterns seen experimentally and thus greatly improve the accuracy of the simulations. We also explore the possible causes of remaining discrepancies between the experimental and simulated detector patterns.
title Stochastic ion emission perturbation mechanisms in atom probe tomography: Linking simulations to experiment
topic Materials Science
url https://arxiv.org/abs/2509.13744