Room temperature reactive sputtering deposition of titanium nitride with high sheet kinetic inductance
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arXiv
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2025
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| author | Li, Juliang Barry, Peter S. Cecil, Tom Lisovenko, Marharyta Yefremenko, Volodymyr Wang, Gensheng Kruhlov, Serhii Karapetrov, Goran Chang, Clarence |
| author_facet | Li, Juliang Barry, Peter S. Cecil, Tom Lisovenko, Marharyta Yefremenko, Volodymyr Wang, Gensheng Kruhlov, Serhii Karapetrov, Goran Chang, Clarence |
| contents | Superconducting thin films with high intrinsic kinetic inductance $L_{k}$ are important for high-sensitivity detectors, enabling strong coupling in hybrid quantum systems, and enhancing nonlinearities in quantum devices. We report the room-temperature reactive sputtering of titanium nitride thin films with a critical temperature $T_{c}$ of \SI{3.8}{K} and a thickness of \SI{27}{nm}. Fabricated into resonators, these films exhibit a sheet kinetic inductance $L_{k, \square}$ of 394~$\textrm{pH}/\square$, as inferred from resonant frequency measurements. %from this film and measure quality factors of $4\times 10^{4}$; these quality factors are likely limited by the low resistivity wafer. X-ray diffraction analysis confirms the formation of stoichiometric TiN, with no residual unreacted titanium. The films also demonstrate a characteristic sheet resistivity of 475~$Ω/\square$, yielding an impedance an order of magnitude higher than conventional 50~$Ω$ resonators. This property could enhance microwave single\textendash photon coupling strength by an order of magnitude, offering transformative potential for hybrid quantum systems and quantum sensing. Furthermore, the high $L_{k}$ enables Kerr nonlinearities comparable to state\textendash of\textendash the\textendash art quantum devices. Combined with its relatively high $T_{c}$, this thin film presents a promising platform for superconducting devices, including amplifiers and qubits operating at higher temperatures. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2509_14133 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Room temperature reactive sputtering deposition of titanium nitride with high sheet kinetic inductance Li, Juliang Barry, Peter S. Cecil, Tom Lisovenko, Marharyta Yefremenko, Volodymyr Wang, Gensheng Kruhlov, Serhii Karapetrov, Goran Chang, Clarence Superconductivity Superconducting thin films with high intrinsic kinetic inductance $L_{k}$ are important for high-sensitivity detectors, enabling strong coupling in hybrid quantum systems, and enhancing nonlinearities in quantum devices. We report the room-temperature reactive sputtering of titanium nitride thin films with a critical temperature $T_{c}$ of \SI{3.8}{K} and a thickness of \SI{27}{nm}. Fabricated into resonators, these films exhibit a sheet kinetic inductance $L_{k, \square}$ of 394~$\textrm{pH}/\square$, as inferred from resonant frequency measurements. %from this film and measure quality factors of $4\times 10^{4}$; these quality factors are likely limited by the low resistivity wafer. X-ray diffraction analysis confirms the formation of stoichiometric TiN, with no residual unreacted titanium. The films also demonstrate a characteristic sheet resistivity of 475~$Ω/\square$, yielding an impedance an order of magnitude higher than conventional 50~$Ω$ resonators. This property could enhance microwave single\textendash photon coupling strength by an order of magnitude, offering transformative potential for hybrid quantum systems and quantum sensing. Furthermore, the high $L_{k}$ enables Kerr nonlinearities comparable to state\textendash of\textendash the\textendash art quantum devices. Combined with its relatively high $T_{c}$, this thin film presents a promising platform for superconducting devices, including amplifiers and qubits operating at higher temperatures. |
| title | Room temperature reactive sputtering deposition of titanium nitride with high sheet kinetic inductance |
| topic | Superconductivity |
| url | https://arxiv.org/abs/2509.14133 |