Characterization of superconducting germanide and germanosilicide films of Pd, Pt, Rh and Ir formed by solid-phase epitaxy
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arXiv
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| Autores principales: | , , , , |
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| Formato: | Preprint |
| Publicado: |
2025
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| _version_ | 1866916955032649728 |
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| author | Li, Hao Shang, Zhongxia Lilly, Michael P. Myronov, Maksym Rokhinson, Leonid P. |
| author_facet | Li, Hao Shang, Zhongxia Lilly, Michael P. Myronov, Maksym Rokhinson, Leonid P. |
| contents | Facilitated by recent advances in strained Ge/SiGe quantum well (QW) growth technology, superconductor-semiconductor hybrid devices based on group IV materials have been developed, potentially augmenting the functionality of quantum circuits. The formation of highly transparent superconducting platinum germanosilicide (PtSiGe) contacts to Ge/SiGe heterostructures by solid-phase epitaxy between Pt and SiGe has recently been reported, although with a relatively low critical temperature $<1\,\mathrm{K}$. Here, we present a comparative study of the superconducting properties of Pt, Pd, Rh, and Ir germanides, along with an in-depth characterization of Ir(Si)Ge films formed by solid-phase epitaxy. For films fabricated under optimal epitaxy conditions, we report $T_\mathrm{c}=3.4\,\mathrm{K}$ ($2.6\,\mathrm{K}$ for IrGe (IrSiGe). High-resolution scanning transmission electron microscopy (HRSTEM) and energy-dispersive X-ray spectroscopy (EDX) reveal that Ir reacts with Ge substrates to form a polycrystalline IrGe layer with a sharp IrGe/Ge interface. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2509_14173 |
| institution | arXiv |
| publishDate | 2025 |
| record_format | arxiv |
| spellingShingle | Characterization of superconducting germanide and germanosilicide films of Pd, Pt, Rh and Ir formed by solid-phase epitaxy Li, Hao Shang, Zhongxia Lilly, Michael P. Myronov, Maksym Rokhinson, Leonid P. Superconductivity Mesoscale and Nanoscale Physics Materials Science Facilitated by recent advances in strained Ge/SiGe quantum well (QW) growth technology, superconductor-semiconductor hybrid devices based on group IV materials have been developed, potentially augmenting the functionality of quantum circuits. The formation of highly transparent superconducting platinum germanosilicide (PtSiGe) contacts to Ge/SiGe heterostructures by solid-phase epitaxy between Pt and SiGe has recently been reported, although with a relatively low critical temperature $<1\,\mathrm{K}$. Here, we present a comparative study of the superconducting properties of Pt, Pd, Rh, and Ir germanides, along with an in-depth characterization of Ir(Si)Ge films formed by solid-phase epitaxy. For films fabricated under optimal epitaxy conditions, we report $T_\mathrm{c}=3.4\,\mathrm{K}$ ($2.6\,\mathrm{K}$ for IrGe (IrSiGe). High-resolution scanning transmission electron microscopy (HRSTEM) and energy-dispersive X-ray spectroscopy (EDX) reveal that Ir reacts with Ge substrates to form a polycrystalline IrGe layer with a sharp IrGe/Ge interface. |
| title | Characterization of superconducting germanide and germanosilicide films of Pd, Pt, Rh and Ir formed by solid-phase epitaxy |
| topic | Superconductivity Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2509.14173 |