Kilovolt-Class $β-Ga_2O_3$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $10^{15}$ $cm^{-3}$ Doped Drift Layers

Fuente: arXiv

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Bibliographic Details
Main Authors:	Peterson, Carl, Saha, Chinmoy Nath, Kahler, Rachel, Liu, Yizheng, Mattapalli, Akhila, Roy, Saurav, Krishnamoorthy, Sriram
Format:	Preprint
Published:	2025
Subjects:	Applied Physics Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2509.14403